IGLD60R070D1AUMA3 vs IGLR70R200D2SXUMA1 Comparison
Detailed side-by-side comparison of IGLD60R070D1AUMA3 by Infineon and IGLR70R200D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IGLD60R070D1AUMA3 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | GaN HEMT (enhancement-mode, normally-off) | GaN HEMT (E-mode, enhancement-mode) |
| Drain-Source Voltage (VDS) | 600 V | 700 V |
| Continuous Drain Current (ID, Tc) | 15 A | 9.3 A |
| Power Dissipation (PD, Tc) | 114 W | 34 W |
| On-Resistance (RDS(on)) | 70 mΩ (typical, VGS = 10 V) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | 1.26 nC |
| Output Charge (Qoss) | [DATA_NEEDED: Qoss] | — |
| Reverse Recovery Charge (Qrr) | Near zero (GaN technology) | — |
| Input Capacitance (Ciss) | 380 pF @ 400 V (per Utmel) | — |
| Package | PG-LSON-8-1 (LSON-8 with exposed pad) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Mounting Type | Surface Mount | — |
| MSL Level | 3 | — |
| Halogen Free | Yes | — |
| RoHS Status | Compliant | — |
| Operating Temperature (Tj) | [DATA_NEEDED: Tj max] | — |
| Series | CoolGaN™ | — |
| Polarity | N-Channel | — |
| Packaging | Tape & Reel | — |
| Factory Pack Quantity | 3000 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolGaN G5 |
| Channel Type | — | N-Channel |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| Operating Temperature Range | — | -40 °C to +150 °C |
| RoHS | — | Compliant |