IGW40N120H3FKSA1 vs IHW40N120R5XKSA1 مقایسه
مقایسه دقیق کنار به کنار IGW40N120H3FKSA1 توسط Infineon و IHW40N120R5XKSA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IGW40N120H3FKSA1 | IHW40N120R5XKSA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | IGBTs | IGBTs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | — |
| Series | TRENCHSTOP™ IGBT3 | — |
| IGBT Type | Trench Field Stop | — |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | — |
| Current - Collector (Ic) Max | 80 A | — |
| Current - Collector Pulsed (Icm) | 160 A | — |
| Power - Max | 483 W | — |
| Gate Charge (Qg) | 185 nC | — |
| Input Type | Standard | — |
| Operating Temperature (TJ) | -40 °C to +175 °C | — |
| نوع نصب | Through Hole | Through Hole |
| بسته‌بندی / کیس | PG-TO247-3-1 (TO-247-3) | — |
| Packaging | Tube | — |
| وضعیت RoHS | [DATA_NEEDED: RoHS compliance status] | — |
| Continuous Collector Current (Ic) | 40 A (per Infineon product page) | — |
| Collector-Emitter Voltage (VCE) | — | 1200 V |
| Continuous Collector Current (IC, TC=25C) | — | 80 A |
| Pulsed Collector Current (ICM) | — | 160 A |
| Maximum Power Dissipation (Ptot) | — | 394 W |
| Gate-Emitter Voltage (VGE) | — | +/-20 V |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | — | [DATA_NEEDED: typical VCE(sat) value] |
| Integrated Anti-Parallel Diode | — | Yes (monolithic reverse-conducting) |
| Technology | — | Trench Field Stop, Reverse-Conducting RC-H5 |
| بسته‌بندی | — | TO-247-3 (PG-TO247-3) through-hole |
| دمای اتصال کاری | — | -40C to +175C |
| Storage Temperature | — | -55C to +150C |
| Soldering Temperature (max 10s) | — | 260 C |
| Switching Application | — | Resonant / soft switching (induction cooking optimized) |
| RoHS Compliance | — | Compliant |
| بدون هالوژن | — | Yes |
| سطح MSL | — | N/A (through-hole) |