IGW40N120H3FKSA1 vs IHW40N120R5XKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IGW40N120H3FKSA1 disebabkan oleh Infineon dan IHW40N120R5XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IGW40N120H3FKSA1 IHW40N120R5XKSA1
Merek Infineon Infineon
Kategori IGBTs IGBTs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series TRENCHSTOP™ IGBT3 —
IGBT Type Trench Field Stop —
Voltage - Collector Emitter Breakdown (Max) 1200 V —
Current - Collector (Ic) Max 80 A —
Current - Collector Pulsed (Icm) 160 A —
Power - Max 483 W —
Gate Charge (Qg) 185 nC —
Input Type Standard —
Operating Temperature (TJ) -40 °C to +175 °C —
Jenis Pemasangan Through Hole Through Hole
Kemasan / Case PG-TO247-3-1 (TO-247-3) —
Packaging Tube —
Status RoHS [DATA_NEEDED: RoHS compliance status] —
Continuous Collector Current (Ic) 40 A (per Infineon product page) —
Collector-Emitter Voltage (VCE) — 1200 V
Continuous Collector Current (IC, TC=25C) — 80 A
Pulsed Collector Current (ICM) — 160 A
Maximum Power Dissipation (Ptot) — 394 W
Gate-Emitter Voltage (VGE) — +/-20 V
VCE(sat) at IC=40A, VGE=15V, Tj=25C — [DATA_NEEDED: typical VCE(sat) value]
Integrated Anti-Parallel Diode — Yes (monolithic reverse-conducting)
Technology — Trench Field Stop, Reverse-Conducting RC-H5
Kemasan — TO-247-3 (PG-TO247-3) through-hole
Suhu Hubungan Operasi — -40C to +175C
Storage Temperature — -55C to +150C
Soldering Temperature (max 10s) — 260 C
Switching Application — Resonant / soft switching (induction cooking optimized)
RoHS Compliance — Compliant
Boson Bebas — Yes
Aras MSL — N/A (through-hole)

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