IGW40N120H3FKSA1 - 1200V TrenchStop IGBT3 80A TO-247 | Infineon
MPN: IGW40N120H3FKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.33 | $6.33 |
| 10 | $5.74 | $57.40 |
| 100 | $5.12 | $512.00 |
| 500 | $4.58 | $2,290.00 |
| 1,000 | $4.07 | $4,070.00 |
IGW40N120H3FKSA1 Overview
An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the voltage-driven, low-conduction-loss characteristics of a MOSFET gate with the high-current, low-saturation-voltage behavior of a bipolar junction transistor. IGBTs sit at the boundary between discrete power transistors and power modules and form the active switching element in the majority of medium-to-high power converters from 600 V to 1700 V. They belong to the broader power semiconductor hierarchy: transistor -> bipolar device -> IGBT -> discrete switching device -> power management building block.
Key features of the IGW40N120H3FKSA1 include its Trench Field Stop cell structure with a gate charge of 185 nC, a MOSFET-like turn-off switching behavior that yields low Eoff, and a robust short-circuit withstand capability suited for inverter and welder duty cycles. The TO-247-3-1 package provides a tab that can be bolted to a heatsink for direct thermal extraction, while the through-hole leads support hand-soldering and wave-solder assembly. The part is qualified to industrial reliability standards and offers stable switching parameters across temperature, enabling repeatable EMI signature in production.
Typical applications for this part include motor drives for industrial automation, solar inverters, uninterruptible power supplies (UPS), induction heating, welding equipment, and switched-mode power supplies operating at switching frequencies between 8 kHz and 40 kHz. The 1200 V collector-emitter breakdown rating gives it ample headroom for 380-480 V AC rectified bus rails up to 700 V DC link voltage. When designing with this IGBT, gate-drive resistor selection, desaturation (DESAT) short-circuit protection, and thermal management at the case-to-heatsink interface are the critical design considerations.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. Engineers evaluating TRENCHSTOP™ third-generation devices for new designs or as second-source parts can use the comparison_table, design_notes, and selection_guide below.
Drop-in alternatives for IGW40N120H3FKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGW40N120H3FKSA1 (same form factor and footprint) — differing in Mounting Type, Operating Junction Temperature, Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IKW40N120H3
✅ Drop-In📋 Reference alternative (not in catalog)
IHW40N120R5XKSA1
✅ Drop-In✓ In Stock
$3.5 / Unit
View Datasheet →IGD08N120S7ATMA1
✅ Drop-In✓ In Stock
$1.65 / Unit
View Datasheet →FGW40N120H
✅ Drop-In📋 Reference alternative (not in catalog)
IXRH40N120
✅ Drop-In📋 Reference alternative (not in catalog)
IGW40N120H3FKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | TRENCHSTOP™ IGBT3 |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) Max | 80 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 483 W |
| Gate Charge (Qg) | 185 nC |
| Input Type | Standard |
| Operating Temperature (TJ) | -40 °C to +175 °C |
| Mounting Type | Through Hole |
| Package / Case | PG-TO247-3-1 (TO-247-3) |
| Packaging | Tube |
| Continuous Collector Current (Ic) | 40 A (per Infineon product page) |
IGW40N120H3FKSA1 Pin Configuration
| Pin 1 | Gate (G) — Gate control input; driven to +15 V (on) and 0 V or -5 V (off) via gate-driver |
| Pin 2 | Collector (C) — Main current terminal; connects to high-voltage DC-link positive rail |
| Pin 3 | Emitter (E) — Main current return terminal; connects to low-side gate-driver return |
| Pin TAB | Collector (metal tab) — Electrically tied to pin 2 (Collector); bolted to heatsink for thermal extraction |
Reverse Bias Safe Operating Area (RBSOA)
Typical Applications
IGW40N120H3FKSA1 is suitable for 6 applications: Industrial Motor Drive Inverter, Solar String Inverter (5-10 kW), Uninterruptible Power Supply (UPS), Induction Heating Cooktop, Welding Inverter, Switched-Mode Power Supply (SMPS) PFC Stage.
Industrial Motor Drive Inverter
The IGW40N120H3FKSA1's 1200 V breakdown and 80 A pulsed collector current make it a strong fit for 3-phase IGBT inverters driving industrial AC motors from 380-480 V AC supplies. Its 185 nC gate charge is comfortably within the drive capability of standard gate-driver ICs, and the TO-247-3-1 package bolts to a standard motor-drive heatsink for direct thermal extraction. In a typical 7.5 kW inverter, the part switches at 8-16 kHz with VCE(sat) typically around 2.0-2.5 V at rated IC, balancing conduction and switching losses. The MOSFET-like turn-off behavior of TRENCHSTOP IGBT3 also reduces Eoff and simplifies EMI filtering at the inverter output. Engineers should add DESAT short-circuit protection and gate-drive resistors sized for the application's dv/dt target.
Recommended
Solar String Inverter (5-10 kW)
In string inverter power stages the IGW40N120H3FKSA1 is used as the boost or H-bridge switch on a DC link reaching 700 V from a 480 V AC rectified bus. Its 1200 V breakdown provides ample margin for transient over-voltage at the DC link, while its 80 A pulsed current supports the peak power point tracking (MPPT) current spikes that occur under rapid irradiance changes. The TRENCHSTOP IGBT3 conduction loss at typical IC=20-30 A is approximately 2.0 V × IC, enabling >97% inverter efficiency when paired with a SiC anti-parallel diode. The TO-247-3-1 package simplifies thermal design by accepting direct heatsink mounting, critical for outdoor inverter enclosures with passive convection cooling.
Recommended
Uninterruptible Power Supply (UPS)
Online double-conversion UPS systems in the 5-15 kW range use IGBTs in the rectifier and inverter stages; the IGW40N120H3FKSA1 is well matched to both stages at this power level. In the inverter stage, it produces a 50/60 Hz sine wave from a 384-408 V DC battery link at switching frequencies of 8-20 kHz. Its 80 A pulsed current handles the inrush of transformer magnetization and battery charge transients during grid-to-battery transfer. The 483 W power rating with TO-247-3-1 thermal envelope allows the part to be paralleled in dual-module UPS configurations for 20 kW+ redundancy. Pair with isolated gate-driver ICs and add a TVS clamp on the DC link for grid-surge protection.
Recommended
Induction Heating Cooktop
Resonant induction-heating cooktops operating at 20-50 kHz switching frequency are a classic application for the IGW40N120H3FKSA1. The part's MOSFET-like turn-off switching behavior yields low Eoff at these higher frequencies, while the 1200 V breakdown safely contains the LLC resonant tank overshoot above the 400 V rectified mains. At 3 kW single-burner power, the part typically operates at IC of 25-35 A and VCE(sat) around 2.0 V, with switching losses becoming the dominant thermal load at 30 kHz. The TO-247-3-1 package bolts directly to a flat cooktop heatsink; designers should minimize stray inductance in the resonant tank to keep turn-off voltage spikes within the 1200 V rating.
Recommended
Welding Inverter
Welding power sources require IGBTs that can sustain short-circuit conditions during arc ignition and tolerate high di/dt stress. The IGW40N120H3FKSA1's robust short-circuit withstand (typical 10 µs at 360 V, 80 A) suits MMA and MIG welding inverter topologies up to ~400 A output. Its 483 W power rating with TO-247-3-1 thermal envelope supports continuous welding duty cycles of 60% or higher when bolted to a welding-machine heatsink. Pair this IGBT with a fast anti-parallel diode and an isolated gate driver with DESAT to protect against arc short-circuit events, and use a snubber network to limit dv/dt across the IGBT during arc restrike.
Recommended
Switched-Mode Power Supply (SMPS) PFC Stage
Bridgeless totem-pole PFC stages at 3-5 kW require 1200 V-rated switches; the IGW40N120H3FKSA1 is well matched to this role with 1200 V breakdown and 40 A continuous current. Operating at 50-100 kHz in continuous conduction mode, the IGBT conducts only during the AC line half-cycle when its body diode would otherwise suffer reverse-recovery issues, while a co-packaged Si MOSFET handles the active half-cycle. The TO-247-3-1 package simplifies thermal integration in the PFC heatsink assembly alongside the Si MOSFETs. Compared with a SiC MOSFET solution, this IGBT-based totem-pole PFC achieves 98-99% efficiency at substantially lower BOM cost.
Recommended
Recommended Products Summary
Engineering reference data for IGW40N120H3FKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKW40N120H3 | IHW40N120R5XKSA1 | IGD08N120S7ATMA1 | FGW40N120H | IXRH40N120 |
|---|---|---|---|---|---|---|
| Package | TO-247-3-1 | TO-247-3-1 - same | TO-247-3-1 - same | TO-247-3-1 - same | TO-247-3-1 - same | TO-247-3-1 - same |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | onsemi | IXYS |
| Collector-Emitter Breakdown (V) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Continuous Collector Current (A) | 40 A | 40 A | 40 A | 8 A | 40 A | 40 A |
| IGBT Generation / Technology | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 | TRENCHSTOP 5 | TRENCHSTOP 7 | Field Stop | PT-IGBT |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
Key Differentiators
- TRENCHSTOP IGBT3 generation with MOSFET-like turn-off (vs IXRH40N120 (PT-IGBT from IXYS))
- 160 A pulsed current rating for motor inrush (vs IGD08N120S7ATMA1 (8 A continuous))
- Same TO-247-3-1 footprint enables second-source strategy (vs FGW40N120H (onsemi cross-brand alternative))
Design Notes
The IGW40N120H3FKSA1 dissipates conduction loss Pcond = VCE(sat) × IC plus switching loss Psw = (Eon+Eoff) × fsw. Estimated: at IC = 40 A continuous, VCE(sat) = 2.0 V (typical from datasheet family), Pcond = 80 W; at fsw = 16 kHz with Eon+Eoff ≈ 5 mJ per the IGBT3 family curves, Psw ≈ 80 W, giving ~160 W total. A TO-247-3-1 with theta_JC ≈ 0.3 °C/W requires a heatsink holding TC below ~125 °C at full load (Tj max 175 °C). Use thermal interface material rated for 5-10 W/m·K and torque the tab to 0.6-0.8 N·m on the heatsink.
Keep the gate-drive loop (gate-emitter resistor, gate-driver output, gate-emitter bypass cap) physically small, with a footprint area of <1 cm² to minimize stray inductance that causes gate-oscillation and dv/dt-induced false turn-on. Place a 10-100 Ω gate resistor (typically 33 Ω for 16 kHz switching) close to the gate pin. Use a separate gate-emitter turn-off pulldown of 10 kΩ to hold the IGBT off during controller power-up. Provide a 100 nF ceramic decoupling capacitor directly between VCC and GND of the gate-driver IC.
Do not exceed the 1200 V VCE rating - peak switching transients from stray inductance in the DC-link loop can exceed the rectified bus voltage by 30-50%. Add a DC-link snubber capacitor of 0.1-1 µF (film type, low-ESL) close to each IGBT to clamp these spikes. For short-circuit protection, implement DESAT detection with a blanking time of 1-3 µs to avoid false tripping during normal turn-on. Do not operate below -40 °C TJ as the package may crack; consult the datasheet cold-temperature curves for safe operating area derating.
Use a copper plane at the TO-247-3-1 collector tab with at least 1 oz copper weight and a footprint pad of 18×15 mm for through-hole solder fillet. Keep the emitter and gate traces on the top side and route the high-current collector trace on the bottom side to minimize loop area. Maintain 8 mm minimum creepage distance between the collector tab and any low-voltage signal traces for reinforced isolation (per IEC 61800-5-1 motor-drive standard). Add thermal vias under the TO-247 pad if mounted on a thermal pad rather than a discrete heatsink.
Compliance Information
RoHS, REACH, lead-free and halogen-free statuses are not explicitly stated in the verified distributor or manufacturer data; values marked 'unknown'. AEC-Q100 not applicable to this industrial IGBT - refer to automotive-grade parts in IHW family if required. Conflict-minerals compliance assumed per Infineon's corporate policy.
