IKD10N60RC2ATMA1 vs IKD04N60RATMA1 Comparison
Detailed side-by-side comparison of IKD10N60RC2ATMA1 by Infineon and IKD04N60RATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IKD10N60RC2ATMA1 | IKD04N60RATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.83 | $0.92 |
| Collector-Emitter Voltage (V_CE) | 600 V | — |
| Continuous Collector Current (I_C nom) | 10 A | — |
| Pulsed Collector Current (I_Cp) | 18.8 A | — |
| Maximum Power Dissipation (P_tot) | 79 W | — |
| Technology | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) | — |
| Integrated Diode | Yes - reverse-conducting 2-diode co-packed | — |
| Package | PG-TO252-3 (DPAK, surface mount) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -40 C to +175 C (junction) | -40C to +150C |
| Gate-Emitter Voltage (V_GE) | [DATA_NEEDED: recommended V_GE value] | — |
| V_CE(sat) at I_C | [DATA_NEEDED: typical V_CE(sat)] | — |
| Switching Frequency (typical) | 10 - 30 kHz (hard-switching) | — |
| Short-Circuit Withstand Time | [DATA_NEEDED: t_sc rating] | — |
| RoHS Status | Compliant | Compliant |
| Qualification | Industrial (qualified per Infineon product validation) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | RC-Drives |
| Transistor Type | — | IGBT - Trench Field Stop with integrated diode |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC) at TC=25C | — | 8 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: pulsed collector current] |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| Gate-Emitter Voltage (VGES) | — | [DATA_NEEDED: gate-emitter voltage rating] |
| VCE(sat) at IC=4A, VGE=15V | — | [DATA_NEEDED: VCE(sat) typical at 4A] |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th)] |
| Integrated Anti-Parallel Diode | — | Yes |
| Pin Count | — | 3 (2 leads + tab) |
| Configuration | — | Single |
| MSL Level | — | 1 |
| Technology Target | — | Consumer drives / motor control |