IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon
MPN: IKD10N60RC2ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.95 | $950.00 |
| 3,000 | $0.83 | $2,490.00 |
Drop-in alternatives for IKD10N60RC2ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IKD04N60RATMA1
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →IKD10N60R
✅ Drop-In📋 Reference alternative (not in catalog)
IKD10N60RC2ATMA1 Maximum Ratings & Electrical Characteristics
| Collector-Emitter Voltage (V_CE) | 600 V |
| Continuous Collector Current (I_C nom) | 10 A |
| Pulsed Collector Current (I_Cp) | 18.8 A |
| Maximum Power Dissipation (P_tot) | 79 W |
| Technology | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) |
| Integrated Diode | Yes - reverse-conducting 2-diode co-packed |
| Package | PG-TO252-3 (DPAK, surface mount) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40 C to +175 C (junction) |
| Switching Frequency (typical) | 10 - 30 kHz (hard-switching) |
| RoHS Status | Compliant |
| Qualification | Industrial (qualified per Infineon product validation) |
IKD10N60RC2ATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input; drive with +15 V to enhance, 0 V to turn off |
| Pin 2 | Collector (Tab) — Collector terminal connected to the metal tab on package bottom; primary thermal path and high-voltage node |
| Pin 3 | Emitter — Emitter return path for gate drive and load current |
Safe Operating Area (Forward-Bias SOA)
Typical Applications
IKD10N60RC2ATMA1 is suitable for 7 applications: Low-Power Motor Drives, Induction Cooking and Microwave Inverters, PFC Boost Converter Switch, Uninterruptible Power Supply (UPS) Inverter, Welding Machine Primary Switch, Solar Micro-Inverter, SMPS Half-Bridge Primary.
Low-Power Motor Drives
The IKD10N60RC2ATMA1's 600 V V_CE rating, 10 A continuous collector current, and monolithically integrated diode make it ideal for low-power three-phase inverter legs driving small brushless DC (BLDC) and induction motors. In a typical 24-48 V battery-powered or rectified-mains-fed drive up to ~1 kW, the RC2 family delivers low V_CE(sat) conduction loss and hard-switching capability at 10-20 kHz PWM. The integrated freewheeling diode eliminates six discrete diodes from a three-phase bridge, shrinking PCB area. Designers should use a +15 V gate drive with 22-33 ohm R_G and place the PG-TO252-3 tab on at least 1 square inch of copper to keep T_j below 125 C at full load.
Recommended
Induction Cooking and Microwave Inverters
Induction-cookware inverters and microwave-oven magnetron drivers demand hard-switching IGBTs with co-packed diodes, and the IKD10N60RC2ATMA1 fits this profile precisely. Its 600 V breakdown provides comfortable margin over rectified 230 V AC (peak ~325 V), the 10 A continuous rating supports cookware loads up to ~2 kW, and the integrated RC2 diode eliminates the need for a discrete anti-parallel device. The trench field-stop cell delivers low switching loss at the 20-30 kHz frequencies typical of induction cookware, while the PG-TO252-3 surface-mount package enables automated SMT assembly at the volumes required by the appliance market.
Recommended
PFC Boost Converter Switch
The IKD10N60RC2ATMA1 serves well as the boost switch in continuous-conduction-mode (CCM) PFC stages up to ~1.5 kW at universal mains input. Its 600 V rating handles 400 V PFC output rails with margin, the 10 A rating covers boost inductor peak currents at full load, and the integrated RC2 diode simplifies the boost freewheel path - though designers typically still use a separate ultrafast boost diode for highest efficiency. Pair it with a dedicated CCM-PFC controller such as the UCC28180 or NCP1654 and a 22 ohm gate resistor to balance switching loss against EMI. For higher-power PFC stages above 2 kW, consider migrating to a TO-247 packaged RC2 device for better thermal headroom.
Recommended
Uninterruptible Power Supply (UPS) Inverter
In small single-phase UPS systems rated 0.5-2 kVA, the IKD10N60RC2ATMA1 can serve as the half-bridge switch in the low-frequency inverter stage that converts 400 V DC battery rail to 230 V AC output. The 600 V V_CE rating comfortably handles 400 V battery rail plus transient overshoot, and the 10 A continuous rating covers typical single-phase loads. The integrated diode simplifies the H-bridge layout, and the trench field-stop cell keeps switching loss acceptable at the 50/60 Hz fundamental with modest PWM at 1-5 kHz. For higher-power three-phase UPS systems, paralleled RC2 devices or larger TO-247 packages are recommended.
Recommended
Welding Machine Primary Switch
Consumer and light-industrial MMA/TIG welding machines often use a single-ended forward or half-bridge topology on the primary side, and the IKD10N60RC2ATMA1 is a cost-effective switch choice for sub-200 A welders. Its 10 A rating supports ~2 kW primary power at 230 V rectified mains, the integrated diode simplifies the half-bridge freewheel path, and the trench field-stop cell handles the hard-switching transients from welding arc ignition. The PG-TO252-3 surface-mount package enables compact, low-cost PCB designs typical of the consumer welder market. Use a snubber network (RCD) across the primary winding to clamp voltage spikes within the 600 V V_CE rating.
Recommended
Solar Micro-Inverter
Single-panel solar micro-inverters (typically 250-600 W) use a DC-DC boost stage followed by a DC-AC inverter, and the IKD10N60RC2ATMA1 can serve as the high-side switch in either stage. In a 600 W micro-inverter, the 10 A continuous rating covers panel currents up to ~12 A, the 600 V rating handles 400 V DC-link plus margin, and the integrated diode simplifies the inverter leg. The RC2 family's trench field-stop cell delivers good hard-switching efficiency at the 20-50 kHz PWM frequencies typical of micro-inverter designs, and the PG-TO252-3 surface-mount package supports automated assembly for high-volume solar deployment.
Recommended
SMPS Half-Bridge Primary
Hard-switched half-bridge SMPS topologies in the 500 W to 1.5 kW range often use 600 V IGBTs as the primary switches when cost is a primary concern and switching frequency is modest (20-40 kHz). The IKD10N60RC2ATMA1's 10 A rating, monolithically integrated RC2 diode, and surface-mount PG-TO252-3 package deliver a cost-effective solution for sub-1 kW SMPS designs such as industrial LED drivers, telecom rectifiers, and small server PSUs. The trench field-stop technology provides a good balance of V_CE(sat) and switching loss at these frequencies, and the integrated diode eliminates two discrete devices from the BOM.
Recommended
Recommended Products Summary
Engineering reference data for IKD10N60RC2ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKD04N60RATMA1 | IKD10N60R |
|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon | Infineon |
| Collector-Emitter Voltage (V_CE) | 600 V | 600 V | 600 V |
| Continuous Collector Current (I_C) | 10 A | 4 A (-60%) | 10 A |
| Integrated Diode | Yes (RC2 generation) | Yes | Yes (RC1 generation) |
| Technology Generation | TRENCHSTOP RC2 | TRENCHSTOP RC | TRENCHSTOP RC1 (earlier) |
| Maximum Power Dissipation | 79 W | [DATA_NEEDED] | 75 W (-5%) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Approximate Unit Price (qty-1) | $1.85 | $1.50 approx | $1.70 approx |
Key Differentiators
- Monolithically integrated RC2 anti-parallel diode (vs Discrete 600 V IGBT + separate diode pair)
- 10 A continuous current in PG-TO252-3 surface-mount package (vs IKD04N60RATMA1 (4 A in same package))
- TRENCHSTOP RC2 cell technology (vs Earlier-generation TRENCHSTOP RC1 (IKD10N60R))
Design Notes
The 79 W power dissipation rating of the IKD10N60RC2ATMA1 assumes the PG-TO252-3 tab is mounted on a 1 square inch copper pour on a standard FR-4 PCB. Estimated: with a smaller copper area (0.25 sq in), the junction-to-ambient thermal resistance rises to roughly 80 C/W, limiting continuous dissipation to about 1.9 W at 25 C ambient. For 5 W or higher dissipation, add a clip-on heatsink or expand the copper area to 2-4 sq in on both top and bottom layers joined with thermal vias. Always measure case temperature T_C under worst-case load - target T_j below 125 C for long-term reliability.
Minimize the gate-drive loop area by placing the gate resistor (10-47 ohm) within 5 mm of the gate pin and routing the gate return trace directly back to the emitter pin (pin 3), NOT to a remote ground. Long gate-emitter loops cause ringing that can falsely enhance the IGBT or exceed the +/-20 V V_GE maximum. For hard-switched half-bridges, keep the half-bridge power loop (DC+ bus cap -> high-side IGBT -> low-side IGBT -> DC- bus cap return) tight and symmetrical; use a low-ESR film or ceramic bypass capacitor directly across the DC bus within 10 mm of the IGBTs to suppress voltage spikes.
Do not exceed V_CE = 600 V even for transients - typical pitfall is forgetting turn-off voltage overshoot from leakage inductance in the transformer or inductor. Add an RCD or TVS clamp across the primary winding to keep the spike below 480 V (80% derating per Infineon's recommendation). Also, do not drive the gate with more than +/-20 V; use a 15 V zener between gate and emitter for protection. Finally, do not rely on the integrated RC2 diode as a freewheeling diode in continuous-conduction high-di/dt applications; verify reverse-recovery behaviour in the datasheet or use a discrete ultrafast diode in parallel for highest efficiency.
Use a multi-layer PCB (at least 4 layers) with an inner ground or V- plane directly under the IGBT to provide a low-impedance return path and improve thermal spreading. Stitch the inner plane to the drain tab copper pour with at least 9 thermal vias (0.3 mm drill, 1 mm pitch) directly under the PG-TO252-3 tab. For SMT reflow, follow JEDEC J-STD-020 MSL-1 handling - the PG-TO252-3 package is generally moisture-tolerant but pre-bake if exposure time exceeds the floor-life. Use a SnAgCu lead-free paste and a reflow profile with peak temperature 245-260 C.
Compliance Information
RoHS compliant per Infineon product page. Industrial qualification only - not AEC-Q100 qualified; for automotive use, look at the AIKW or IKD-AEC-Q100 variants in the RC2 family. Halogen-free status not explicitly stated in the verified web data.
