IKD10N60RC2ATMA1 vs IKD04N60RATMA1 Сравнение
Подробное сравнение бок о бок IKD10N60RC2ATMA1 от Infineon и IKD04N60RATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IKD10N60RC2ATMA1 | IKD04N60RATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | IGBTs | IGBTs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,83 | $0,92 |
| Collector-Emitter Voltage (V_CE) | 600 V | — |
| Continuous Collector Current (I_C nom) | 10 A | — |
| Pulsed Collector Current (I_Cp) | 18.8 A | — |
| Maximum Power Dissipation (P_tot) | 79 W | — |
| Technology | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) | — |
| Integrated Diode | Yes - reverse-conducting 2-diode co-packed | — |
| Корпус | PG-TO252-3 (DPAK, surface mount) | PG-TO252-3 (DPAK) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -40 C to +175 C (junction) | -40C to +150C |
| Gate-Emitter Voltage (V_GE) | [DATA_NEEDED: recommended V_GE value] | — |
| V_CE(sat) at I_C | [DATA_NEEDED: typical V_CE(sat)] | — |
| Switching Frequency (typical) | 10 - 30 kHz (hard-switching) | — |
| Short-Circuit Withstand Time | [DATA_NEEDED: t_sc rating] | — |
| Статус RoHS | Compliant | Compliant |
| Qualification | Industrial (qualified per Infineon product validation) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | RC-Drives |
| Тип транзистора | — | IGBT - Trench Field Stop with integrated diode |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC) at TC=25C | — | 8 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: pulsed collector current] |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| Gate-Emitter Voltage (VGES) | — | [DATA_NEEDED: gate-emitter voltage rating] |
| VCE(sat) at IC=4A, VGE=15V | — | [DATA_NEEDED: VCE(sat) typical at 4A] |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th)] |
| Integrated Anti-Parallel Diode | — | Yes |
| Число выводов | — | 3 (2 leads + tab) |
| Configuration | — | Single |
| Уровень MSL | — | 1 |
| Technology Target | — | Consumer drives / motor control |