IKD10N60RC2ATMA1 vs IKD04N60RATMA1 Vergleich
Detaillierter Direktvergleich von IKD10N60RC2ATMA1 von Infineon und IKD04N60RATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IKD10N60RC2ATMA1 | IKD04N60RATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,83 | $0,92 |
| Collector-Emitter Voltage (V_CE) | 600 V | — |
| Continuous Collector Current (I_C nom) | 10 A | — |
| Pulsed Collector Current (I_Cp) | 18.8 A | — |
| Maximum Power Dissipation (P_tot) | 79 W | — |
| Technology | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) | — |
| Integrated Diode | Yes - reverse-conducting 2-diode co-packed | — |
| Gehäuse | PG-TO252-3 (DPAK, surface mount) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -40 C to +175 C (junction) | -40C to +150C |
| Gate-Emitter Voltage (V_GE) | [DATA_NEEDED: recommended V_GE value] | — |
| V_CE(sat) at I_C | [DATA_NEEDED: typical V_CE(sat)] | — |
| Switching Frequency (typical) | 10 - 30 kHz (hard-switching) | — |
| Short-Circuit Withstand Time | [DATA_NEEDED: t_sc rating] | — |
| RoHS-Status | Compliant | Compliant |
| Qualification | Industrial (qualified per Infineon product validation) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | RC-Drives |
| Transistortyp | — | IGBT - Trench Field Stop with integrated diode |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC) at TC=25C | — | 8 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: pulsed collector current] |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| Gate-Emitter Voltage (VGES) | — | [DATA_NEEDED: gate-emitter voltage rating] |
| VCE(sat) at IC=4A, VGE=15V | — | [DATA_NEEDED: VCE(sat) typical at 4A] |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th)] |
| Integrated Anti-Parallel Diode | — | Yes |
| Pin-Anzahl | — | 3 (2 leads + tab) |
| Configuration | — | Single |
| MSL-Level | — | 1 |
| Technology Target | — | Consumer drives / motor control |