IKD10N60RC2ATMA1 vs IKD04N60RATMA1 비교

다음의 상세 나란히 비교: IKD10N60RC2ATMA1 제조: Infineon 및 IKD04N60RATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IKD10N60RC2ATMA1 IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon

IKD10N60RC2ATMA1 ✓ 활성

사양 비교

파라미터 IKD10N60RC2ATMA1 IKD04N60RATMA1
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.83 $0.92
Collector-Emitter Voltage (V_CE) 600 V —
Continuous Collector Current (I_C nom) 10 A —
Pulsed Collector Current (I_Cp) 18.8 A —
Maximum Power Dissipation (P_tot) 79 W —
Technology TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) —
Integrated Diode Yes - reverse-conducting 2-diode co-packed —
패키지 PG-TO252-3 (DPAK, surface mount) PG-TO252-3 (DPAK)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -40 C to +175 C (junction) -40C to +150C
Gate-Emitter Voltage (V_GE) [DATA_NEEDED: recommended V_GE value] —
V_CE(sat) at I_C [DATA_NEEDED: typical V_CE(sat)] —
Switching Frequency (typical) 10 - 30 kHz (hard-switching) —
Short-Circuit Withstand Time [DATA_NEEDED: t_sc rating] —
RoHS 상태 Compliant Compliant
Qualification Industrial (qualified per Infineon product validation) —
Manufacturer — Infineon Technologies
Series — RC-Drives
트랜지스터 유형 — IGBT - Trench Field Stop with integrated diode
Collector-Emitter Voltage (VCES) — 600 V
Continuous Collector Current (IC) at TC=25C — 8 A
Pulsed Collector Current (ICM) — [DATA_NEEDED: pulsed collector current]
Power Dissipation (PD) at TC=25C — 75 W
Gate-Emitter Voltage (VGES) — [DATA_NEEDED: gate-emitter voltage rating]
VCE(sat) at IC=4A, VGE=15V — [DATA_NEEDED: VCE(sat) typical at 4A]
Gate Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th)]
Integrated Anti-Parallel Diode — Yes
핀 수 — 3 (2 leads + tab)
Configuration — Single
MSL 레벨 — 1
Technology Target — Consumer drives / motor control

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