IPB024N10N5ATMA1 vs IPT015N10NF2SATMA1 Comparison
Detailed side-by-side comparison of IPB024N10N5ATMA1 by Infineon and IPT015N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 β ActiveInfineon
IPT015N10NF2SATMA1
IPT015N10NF2SATMA1 - 100V 315A 1.5mΞ© OptiMOS MOSFET | Infineon
IPT015N10NF2SATMA1 β ActiveSpecification Comparison
| Parameter | IPB024N10N5ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.86 | $3.10 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | OptiMOS trench, N-channel enhancement |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, TC=25C) | 180 A | β |
| Power Dissipation (PD, TC=25C) | 250 W | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | β |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | β |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55 Β°C to +175 Β°C |
| Package | PG-TO263-7 (D2PAK-7) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited floor life at <30C/85% RH) | β |
| Packaging | Tape & Reel (13-inch reel) | β |
| Halogen-Free | Yes (per Infineon product family policy) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc) | β | 315 A |
| Continuous Drain Current (ID, Ta) | β | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | β | 1.5 mΞ© |
| Gate-Source Threshold (VGS(th)) | β | 3.8 V at 267 Β΅A |
| Total Power Dissipation (Ta) | β | 3.8 W |
| Total Power Dissipation (Tc) | β | 300 W |
| Gate Drive Voltage (typ) | β | 10 V |
| Single-Pulse Avalanche Energy | β | [DATA_NEEDED: EAS value] |