IPB039N10N3GATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPB039N10N3GATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB039N10N3GATMA1 - 100V 160A OptiMOS 3 N-Channel MOSFET | Infineon
IPB039N10N3GATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPB039N10N3GATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.28 | $0.82 |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Technology | MOSFET (Metal Oxide) | Trench MOSFET (OptiMOS 3) |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 160 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at TC=25C | 214 W | β |
| On-State Resistance RDS(on) at VGS=10V (typ) | 3.9 mOhm | β |
| Gate-Source Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd typ] | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | PG-TO263-7 (D2PAK-7, 6 leads + tab) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | β |
| RoHS / Halogen-Free Status | RoHS compliant, halogen-free | β |
| Series / Family | OptiMOS 3 | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |