IPB039N10N3GATMA1 - 100V 160A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPB039N10N3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.42 | $34.20 |
| 100 | $2.95 | $295.00 |
| 500 | $2.61 | $1,305.00 |
| 1,000 | $2.28 | $2,280.00 |
IPB039N10N3GATMA1 Overview
A power MOSFET is a voltage-controlled majority-carrier switching transistor used to efficiently switch and amplify DC and low-frequency signals. Within the broader device taxonomy, this part sits in the hierarchy N-channel MOSFET -> power MOSFET -> discrete semiconductor -> transistor. The OptiMOS 3 family specifically targets synchronous rectification and primary-side switching in SMPS, leveraging trench-gate technology to minimize conduction and switching losses simultaneously.
Key specifications include a 100 V drain-to-source breakdown voltage (VDS), 160 A continuous drain current at TC, and an extremely low typical on-state resistance RDS(on) of approximately 3.9 mOhm at VGS = 10 V. The gate charge is optimized for high efficiency, with very low Q g and Q gd figures of merit that yield an excellent gate-charge x RDS(on) FOM. The part is rated MSL1 (moisture sensitivity level 1) and is RoHS-compliant plus halogen-free, suiting modern lead-free reflow profiles.
Architecturally, the IPB039N10N3GATMA1 uses Infineon's third-generation OptiMOS trench process, which reduces cell pitch and shrinks the die while maintaining avalanche ruggedness. The tab and 6-lead D2PAK-7 footprint give a low thermal resistance path, allowing the 214 W TC dissipation figure to translate into usable continuous current when properly mounted to a PCB copper pour.
Typical applications include primary-side switches in 48 V telecom and server DC-DC bricks, secondary-side synchronous rectifiers in telecom and datacom SMPS, solar inverters, motor-control H-bridges for industrial drives, hot-swap and OR-ing controllers, and automotive 12 V/24 V high-current loads. The combination of low RDS(on) and strong avalanche rating also suits battery-protection and e-fuse circuits.
When designing with this device, gate-drive voltage of 10 V is recommended for full RDS(on) performance, and the exposed tab must be soldered to a sufficiently large copper area to keep junction temperature within SOA. Designers should also verify dv/dt immunity in hard-switched topologies, as OptiMOS 3 is optimized for soft-switched or moderately hard-switched use.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers a single-page reference for selecting and sourcing the IPB039N10N3GATMA1.
Drop-in alternatives for IPB039N10N3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB039N10N3GATMA1 (same form factor and footprint) — differing in Technology, Operating Temperature Range, FET Type, Drain-Source Voltage (VDS), Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB039N10N3-G
✅ Drop-In📋 Reference alternative (not in catalog)
BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IPB110P06LMATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.31 / Unit
View Datasheet →IPB60R040CFD7ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$5.19 / Unit
View Datasheet →IPB039N10N3GATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25C | 160 A |
| Power Dissipation (PD) at TC=25C | 214 W |
| On-State Resistance RDS(on) at VGS=10V (typ) | 3.9 mOhm |
| Operating Temperature Range | -55C to +175C |
| Package | PG-TO263-7 (D2PAK-7, 6 leads + tab) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS / Halogen-Free Status | RoHS compliant, halogen-free |
| Series / Family | OptiMOS 3 |
IPB039N10N3GATMA1 Pin Configuration
| Pin 1 | Source — Source (low-side connection) |
| Pin 2 | Source — Source (low-side connection) |
| Pin 3 | Source — Source (low-side connection) |
| Pin 4 | Gate — Gate (MOSFET gate drive input) |
| Pin 5 | Source — Source (low-side connection) |
| Pin 6 | Source — Source (low-side connection) |
| Pin 7 | Drain (Tab) — Drain / exposed tab (high-side connection, heatsink) |
Safe Operating Area (DC, TC=25C)
Typical Applications
IPB039N10N3GATMA1 is suitable for 6 applications: 48V Telecom/Datacom SMPS Primary Switch, Secondary-Side Synchronous Rectifier, Solar Inverter / PV Boost Converter, Industrial Motor Drive H-Bridge, Hot-Swap / OR-ing Controller, Automotive 12V/24V High-Current Load.
48V Telecom/Datacom SMPS Primary Switch
The IPB039N10N3GATMA1's 100 V VDS rating and 3.9 mOhm RDS(on) at VGS=10V make it an excellent primary-side switch for 48 V telecom and datacom switched-mode power supplies (SMPS). Its OptiMOS 3 trench architecture minimizes conduction loss while the low Qg x RDS(on) figure of merit reduces switching loss at high frequencies (100-300 kHz). Placed on the primary side of a 48 V-to-isolated-low-voltage DC-DC brick, it delivers high efficiency in compact form factors.
Recommended
Secondary-Side Synchronous Rectifier
The IPB039N10N3GATMA1 is well-suited as a secondary-side synchronous rectifier in isolated DC-DC converters. The very low 3.9 mOhm RDS(on) directly reduces rectifier conduction loss, while the 100 V rating provides safe headroom for 36-75 V input telecom brick outputs. Compared to a Schottky diode, the synchronous-MOSFET topology typically improves efficiency by 2-4 percentage points at full load, especially at low output voltages (3.3V-12V).
Recommended
Solar Inverter / PV Boost Converter
In solar inverter boost and buck stages operating from 30-80 V PV strings, the IPB039N10N3GATMA1 provides 100 V VDS headroom plus the high pulse current capability needed during MPPT transitions. The 160 A ID rating handles the full boost inductor current, while the 3.9 mOhm RDS(on) minimizes conduction loss that directly reduces PV-to-grid conversion efficiency. The D2PAK-7 package simplifies heatsink attachment versus larger TO-247 parts.
Recommended
Industrial Motor Drive H-Bridge
For 24-48 V industrial motor drives, the IPB039N10N3GATMA1 forms one half of an H-bridge switching leg, handling 160 A peak currents for starting and overload events. The 100 V rating withstands back-EMF spikes from inductive motor windings, while the 3.9 mOhm RDS(on) reduces I2R heating during continuous PWM operation at 10-50 kHz. The robust D2PAK-7 thermal path supports sustained high-power PWM in robotic and servo-drive applications.
Recommended
Hot-Swap / OR-ing Controller
The IPB039N10N3GATMA1 functions as the high-current pass element in 48 V hot-swap and OR-ing circuits, where its 100 V VDS, 160 A ID, and low RDS(on) enable minimal voltage drop across the MOSFET in normal operation. During a fault, the part's avalanche ruggedness absorbs transient energy, and its low thermal resistance supports continuous high-current operation. Surface-mount D2PAK-7 also simplifies multi-PCB parallel layouts.
Recommended
Automotive 12V/24V High-Current Load
In automotive 12 V/24 V high-current applications such as electric power steering, brake systems, and heated-seat controllers, the IPB039N10N3GATMA1 provides the current capacity and voltage headroom required. The 100 V VDS rating easily handles 24 V truck bus transients, while the 3.9 mOhm RDS(on) minimizes conduction loss that would otherwise waste battery energy. For full automotive qualification, however, designers should select the -Q1 variant or AEC-Q100 qualified alternatives.
Recommended
Recommended Products Summary
Engineering reference data for IPB039N10N3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB039N10N3-G | BSC076N04NDATMA1 | IPB110P06LMATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO263-7 (D2PAK-7) | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2DAK-7) - same | PG-TO263-7 (D2PAK-7) - same | PG-TO263-7 (D2PAK-7) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 40 V | -60 V (P-channel) | 600 V |
| Continuous Drain Current (ID) | 160 A | 160 A | ~50 A (lower) | ~80 A | ~30 A |
| RDS(on) at VGS=10V (typ) | 3.9 mOhm | 3.9 mOhm | ~7.6 mOhm | ~11 mOhm | ~40 mOhm |
| Technology / Family | OptiMOS 3 (trench) | OptiMOS 3 (same) | OptiMOS | OptiMOS P-channel | CoolMOS CFD7 |
| Channel Polarity | N-channel | N-channel | N-channel | P-channel | N-channel |
| Automotive Qualification | Not AEC-Q100 qualified | Not AEC-Q100 qualified | Not AEC-Q100 qualified | AEC-Q101 (automotive) | AEC-Q101 (automotive) |
Key Differentiators
- Higher continuous current than same-package 100V N-channel alternatives (vs BSC076N04NDATMA1)
- Lower RDS(on) and higher current than complementary P-channel (vs IPB110P06LMATMA1)
- Much lower RDS(on) than higher-voltage CoolMOS alternative (vs IPB60R040CFD7ATMA1)
Design Notes
Estimated: With 100 V VDS, 3.9 mOhm RDS(on), and 160 A peak ID, dissipation in continuous operation can reach 100 W. The D2PAK-7 package requires substantial PCB copper (at least 6 square inches of 2 oz copper) to keep junction temperature below 125C at full load. Without proper copper area, derate current by 50% or more. Always consult SOA curves in datasheet for sustained operation.
Place the gate drive return path (Kelvin source) directly between the gate-driver GND and the source pin (pin 4 adjacent to source pins). Avoid running high di/dt drain current under the gate trace - this causes inductive coupling that can false-trigger the gate. Use a 10-ohm gate resistor plus optional 100k pull-down on gate-to-source for Miller-clamp protection during high dv/dt switching.
Do not exceed the VGS maximum rating of +-20 V (10-12 V typical drive). Below VGS(th) (~3-4 V), the MOSFET is in linear region with high dissipation - gate-drive undervoltage will destroy the part. Ensure VGS stays at 10V minimum under all transient conditions, including power-up sequencing. Also, the exposed tab is electrically connected to the drain - isolate it from chassis ground.
Use thermal vias under the exposed tab to spread heat to inner copper layers. A 3x3 array of 0.3 mm thermal vias with 0.5 oz plating is the typical recommendation. Solder paste stencil aperture for the tab should be 50-70% coverage to avoid tombstoning and ensure void-free solder joint for lowest thermal resistance.
Compliance Information
RoHS compliant and halogen-free per Infineon product page. Not AEC-Q100 qualified - for automotive, choose an AEC-Q101 qualified alternative such as IPB110P06LMATMA1.
