IPB039N10N3GATMA1 vs BSC076N04NDATMA1 Perbandingan

Perbandingan bersamaan detil IPB039N10N3GATMA1 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB039N10N3GATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel 2x N-Channel MOSFET array
Technology MOSFET (Metal Oxide) Trench MOSFET (OptiMOS 3)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 160 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25C 214 W —
On-State Resistance RDS(on) at VGS=10V (typ) 3.9 mOhm —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd typ] —
Rentang Suhu Kerja -55C to +175C —
Paket PG-TO263-7 (D2PAK-7, 6 leads + tab) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 —
RoHS / Halogen-Free Status RoHS compliant, halogen-free —
Series / Family OptiMOS 3 —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubung Kerja — -55 C to +175 C
Paket / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)

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