IPB039N10N3GATMA1 vs BSC076N04NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB039N10N3GATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB039N10N3GATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel 2x N-Channel MOSFET array
Technology MOSFET (Metal Oxide) Trench MOSFET (OptiMOS 3)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 160 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC=25C 214 W —
On-State Resistance RDS(on) at VGS=10V (typ) 3.9 mOhm —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd typ] —
Gambaran Suhu Operasi -55C to +175C —
Kemasan PG-TO263-7 (D2PAK-7, 6 leads + tab) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
RoHS / Halogen-Free Status RoHS compliant, halogen-free —
Series / Family OptiMOS 3 —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)

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