IPB107N20N3GATMA1 vs BSC077N12NS3GATMA1 Comparison
Detailed side-by-side comparison of IPB107N20N3GATMA1 by Infineon and BSC077N12NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 β ActiveInfineon
BSC077N12NS3GATMA1
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon
BSC077N12NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB107N20N3GATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) | 200 V | 120 V |
| Continuous Drain Current (ID) at Tc | 88 A | 98 A |
| Maximum Power Dissipation (Pd) at Tc | 300 W | β |
| On-Resistance RDS(on) at VGS=10V | 9.6 milliohm (typical, per third-party listing) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max and operating range] | β |
| Package | PG-TO263-3 (D2PAK) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain, Source, Gate) + Tab | 8 |
| RoHS Status | Compliant | Compliant |
| Technology | OptiMOS 3 trench MOSFET | β |
| Part Family | β | OptiMOS 3 (120 V) |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | β | 13.4 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max @ VGS=10V | β | 7.7 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | β | 139 W |
| Operating Junction Temperature | β | -55C to +150C |
| MSL Level | β | 1 |
| Automotive Grade | β | Yes (per Infineon part number suffix / datasheet) |