IPB107N20N3GATMA1 vs BSC077N12NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB107N20N3GATMA1 disebabkan oleh Infineon dan BSC077N12NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB107N20N3GATMA1 BSC077N12NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET (enhancement-mode trench)
Drain-Source Voltage (VDS) 200 V 120 V
Continuous Drain Current (ID) at Tc 88 A 98 A
Maximum Power Dissipation (Pd) at Tc 300 W —
On-Resistance RDS(on) at VGS=10V 9.6 milliohm (typical, per third-party listing) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Gambaran Suhu Operasi [DATA_NEEDED: Tj max and operating range] —
Kemasan PG-TO263-3 (D2PAK) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Drain, Source, Gate) + Tab 8
Status RoHS Compliant Compliant
Technology OptiMOS 3 trench MOSFET —
Part Family — OptiMOS 3 (120 V)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta — 13.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-State Resistance RDS(on) max @ VGS=10V — 7.7 mΩ
Gate Threshold Voltage VGS(th) typ — 2.5 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Power Dissipation (PD) at Tc — 139 W
Suhu Hubungan Operasi — -55C to +150C
Aras MSL — 1
Automotive Grade — Yes (per Infineon part number suffix / datasheet)

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