IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
MPN: IPB107N20N3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.16 | $2.16 |
| 10 | $1.95 | $19.50 |
| 100 | $1.72 | $172.00 |
| 500 | $1.45 | $725.00 |
| 1,000 | $1.18 | $1,180.00 |
Drop-in alternatives for IPB107N20N3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB107N20N3G
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IPB107N20NA
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IPB107N20NAATMA1
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BSC123N08NS3GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →BSC077N12NS3GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.71 / Unit
View Datasheet →IPB107N20N3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at Tc | 88 A |
| Maximum Power Dissipation (Pd) at Tc | 300 W |
| On-Resistance RDS(on) at VGS=10V | 9.6 milliohm (typical, per third-party listing) |
| Package | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Drain, Source, Gate) + Tab |
| RoHS Status | Compliant |
| Technology | OptiMOS 3 trench MOSFET |
IPB107N20N3GATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate control input |
| Pin 2 | Drain — MOSFET drain (internally connected to exposed metal tab) |
| Pin 3 | Source — MOSFET source |
Safe Operating Area (estimated based on 200V/88A/300W rating)
Typical Applications
IPB107N20N3GATMA1 is suitable for 7 applications: 48V Synchronous Rectification, DC-DC Converter Primary-Side Switch, Uninterruptible Power Supplies (UPS), DC Motor Drive Inverters, Solar Inverter Power Stage, Industrial High-Side Switching, Telecom Hot-Swap & ORing.
48V Synchronous Rectification
The IPB107N20N3GATMA1's 200V VDS rating and ~9.6 milliohm RDS(on) make it a benchmark synchronous-rectifier MOSFET for 48V telecom and server bus architectures, where minimizing conduction loss directly improves overall power-supply efficiency. Used as the low-side FET in a synchronous buck or forward converter, the part drops less than 1W per 10A of rectified current compared with planar MOSFET generations, freeing up thermal budget for higher power density. The D2PAK package's exposed tab enables direct PCB copper heatsinking without external heatsinks up to ~5W continuous dissipation. Compared with Schottky-diode rectification, this part eliminates reverse-recovery loss and supports switching frequencies above 100 kHz for smaller magnetics.
Recommended
DC-DC Converter Primary-Side Switch
In hard-switched and soft-switched DC-DC converter topologies, the IPB107N20N3GATMA1 serves as the primary-side high-voltage MOSFET on the 100V-150V bus side of isolated converters. Its 200V VDS provides generous headroom for voltage spikes on the primary winding of a flyback or forward converter, while the OptiMOS 3 trench technology yields low gate charge (Qg) for fast switching transitions above 50 kHz. The 88A continuous drain current supports power levels up to several kilowatts in full-bridge or two-switch-forward topologies. The D2PAK footprint also simplifies thermal layout - a 1 square-inch copper pour keeps the junction temperature well within the 300W Tc rating for most industrial designs.
Recommended
Uninterruptible Power Supplies (UPS)
The IPB107N20N3GATMA1 is widely deployed in UPS inverter stages where 48V battery stacks are converted to 120V/230V AC outputs at power levels from 1 kW to 10 kW. Its 200V rating handles the bus voltage of stacked 48V batteries with margin for transients, while its 88A continuous current rating supports high-power inverter legs without paralleling. The 9.6 milliohm on-resistance reduces I²R conduction loss in continuous-conduction-mode (CCM) operation, which dominates UPS thermal load. D2PAK packaging allows automated SMD assembly in volume-manufactured UPS modules.
Recommended
DC Motor Drive Inverters
For DC motor drive inverters operating from 48V-100V battery or bus sources, the IPB107N20N3GATMA1 delivers the current-handling and voltage margin required by H-bridge and three-phase inverter topologies. The 88A continuous rating supports motors up to several horsepower in industrial automation, while the 9.6 milliohm RDS(on) keeps conduction loss low during high-torque low-RPM operation. The OptiMOS 3 process also provides robust avalanche ruggedness for the back-EMF energy of inductive motor loads. The D2PAK footprint allows dense power-stage layout next to the gate driver, minimizing parasitic inductance in the high-current loop.
Recommended
Solar Inverter Power Stage
In string-inverter and micro-inverter power stages accepting 60V-150V DC from photovoltaic panels, the IPB107N20N3GATMA1 serves as the primary switching element in boost and full-bridge topologies. Its 200V rating covers Voc (open-circuit voltage) of high-voltage PV strings with margin for cold-temperature voltage rise, and its 9.6 milliohm on-resistance minimizes loss in continuous MPPT (maximum power point tracking) operation. The 300W Tc power dissipation rating supports thermal design for outdoor inverter enclosures without active cooling. The surface-mount D2PAK package enables automated assembly and lower parasitic inductance than through-hole TO-247 alternatives.
Recommended
Industrial High-Side Switching
For industrial 48V-100V high-side load switching applications such as PoE (Power over Ethernet) injectors, industrial relay drivers and battery-management systems, the IPB107N20N3GATMA1 handles continuous currents up to 88A with low conduction loss. Its 200V VDS provides protection against inductive kickback from relays, solenoids and motors. While the part is N-channel (which normally requires a charge pump or bootstrap for high-side use), its low RDS(on) makes it attractive where a P-channel alternative would dissipate significantly more power. The D2PAK footprint is thermally efficient for high-duty-cycle industrial loads.
Recommended
Telecom Hot-Swap & ORing
In -48V telecom rectifier and battery-ORing (redundant power) applications, the IPB107N20N3GATMA1 acts as a hot-swap controller's main pass element or as the MOSFET in an ideal-diode ORing circuit. The 200V VDS comfortably exceeds -75V telecom bus transients, while the 9.6 milliohm RDS(on) keeps power dissipation manageable for 30A-50A load-sharing rails. Its D2PAK package supports the high continuous currents typical of telecom shelf equipment. Infineon's OptiMOS 3 process also provides tight RDS(on) distribution, which is critical for balanced current sharing between parallel ORing MOSFETs.
Recommended
Recommended Products Summary
Engineering reference data for IPB107N20N3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB107N20N3G | IPB107N20NA | IPB107N20NAATMA1 | BSC123N08NS3GATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS (Drain-Source Voltage) | 200 V | 200 V | 200 V | 200 V | 80 V | 120 V |
| Continuous Drain Current (Tc) | 88 A | 88 A | ~80 A | ~80 A | 11 A (typical) | 12 A (typical) |
| Power Dissipation (Tc) | 300 W | 300 W | 300 W | 300 W | lower (~100W) | lower (~100W) |
| RDS(on) at VGS=10V (typical) | 9.6 milliohm | 9.6 milliohm | ~10.5 milliohm | ~10.5 milliohm | lower RDS(on) at 80V | lower RDS(on) at 120V |
| Technology | OptiMOS 3 trench | OptiMOS 3 trench | OptiMOS (earlier gen) | OptiMOS (earlier gen) | OptiMOS 3 | OptiMOS 3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Unit Price (qty 1, approx.) | $2.16 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest RDS(on) in Infineon 200V D2PAK OptiMOS 3 family (vs IPB107N20NA)
- 200V VDS provides 2x voltage margin over 80V-120V D2PAK alternatives (vs BSC123N08NS3GATMA1)
- 300W power dissipation in compact D2PAK footprint (vs BSC077N12NS3GATMA1)
Design Notes
The PG-TO263-3 (D2PAK) tab is the primary thermal path. The PCB copper area connected to the tab must be sized to keep junction temperature below 150°C. Estimated: at Pd = 5W in still air on a 1 oz copper 1 square-inch pad, junction temperature rise is approximately 50°C above ambient. For higher dissipation (10W+), add thermal vias under the tab to inner-layer copper planes or attach an external heatsink with thermal compound. The D2PAK theta_JC is typically under 1°C/W, but theta_JA in still air without copper is poor.
Minimize the high-current loop area between the MOSFET drain-source and the DC-link/transformer primary. Keep the gate-drive loop compact (gate-driver output to gate-resistor to MOSFET gate to source-return) to avoid ringing that can exceed VGS rating and cause shoot-through. Use a 10 ohm gate resistor to dampen oscillation, and place a small ferrite bead or RC snubber across the drain-source if ringing exceeds 30% of VDS. The D2PAK source pin is the Kelvin return for gate drive - route the gate-driver ground directly to the source pin, not to the power ground plane.
Do not exceed the gate-source voltage rating (typically ±20V for OptiMOS 3); use a 12V-15V gate-drive supply with a Zener clamp. Ensure the body diode reverse-recovery is accounted for in dead-time calculation when used as a synchronous rectifier - OptiMOS 3 has low Qrr but a minimum dead-time of 50-100 ns is still required. Do not parallel IPB107N20N3GATMA1 parts without individual gate resistors (10-100 ohm) to prevent parasitic oscillation.
Estimated: at continuous 50A drain current and 200V VDS, the conduction loss is I²R = 50² × 0.0096 = 24W. In a hard-switched converter at 100 kHz with 100 ns switching transitions, switching loss adds approximately Eon + Eoff = ~1 mJ per cycle = 100W at full load. Total dissipation can therefore exceed 100W, demanding a substantial PCB copper heatsink area. For lower-loss designs use zero-voltage-switching (ZVS) topologies that leverage the part's low output charge Coss.
Compliance Information
RoHS compliance confirmed by GlobalSpec listing ('ROHS COMPLIANT: YES') and Infineon product page. AEC-Q100 not applicable (industrial-grade part, not automotive-qualified).
