IPB120P04P404ATMA1 vs IPB120P04P404ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB120P04P404ATMA1 sa pamamagitan ng Infineon at IPB120P04P404ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB120P04P404ATMA2 - 40V P-Channel 120A OptiMOS MOSFET | Infineon
IPB120P04P404ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB120P04P404ATMA1 | IPB120P04P404ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide), Enhancement Mode, OptiMOS-P2 | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) | 3.5 mΩ at VGS = -10 V, ID = -100 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | -4 V at ID = -340 µA (max) | — |
| Total Gate Charge (Qg) | 205 nC at VGS = -10 V | — |
| Reverse Transfer Capacitance (Crss) | 14.79 nF at 25 V | — |
| Continuous Power Dissipation (PD) at Tc | 136 W | — |
| Single-Pulse Avalanche Energy (EAS) | 78 mJ | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Packhaging | PG-TO263-3 (D2PAK), 3-pin (2 + tab), surface mount | PG-TO263-3-2 (D2PAK) |
| Level ng MSL | MSL1 (260 °C peak reflow) | — |
| AEC-Q100/101 Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100 % avalanche tested | — |
| RoHS / Green | Green package, RoHS compliant | — |
| Uri ng Pagpapasok | Surface Mount (D2PAK, exposed tab) | Surface Mount |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB120P04P404ATMA2 |
| Series | — | OptiMOS-P2 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ Tc=25C | — | 120 A |
| On-Resistance (RDS(on)) @ VGS=-10V, ID=-100A | — | 3.8 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) @ VGS=-10V | — | 205 nC |
| Input Capacitance (Ciss) @ VDS=25V | — | 14,790 pF |
| Power Dissipation (PD) @ Tc=25C | — | 136 W |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C (TJ) |
| Bilang ng Pin | — | 3 (Tab + 2 Leads) |
| Tindminan RoHS | — | Compliant |