IPB120P04P404ATMA1 vs IPB120P04P404ATMA2 तुलना
विस्तृत दोनों ओर की तुलना IPB120P04P404ATMA1 द्वारा Infineon और IPB120P04P404ATMA2 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPB120P04P404ATMA2 - 40V P-Channel 120A OptiMOS MOSFET | Infineon
IPB120P04P404ATMA2 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IPB120P04P404ATMA1 | IPB120P04P404ATMA2 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide), Enhancement Mode, OptiMOS-P2 | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc | 120 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) | 3.5 mΩ at VGS = -10 V, ID = -100 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | -4 V at ID = -340 µA (max) | — |
| Total Gate Charge (Qg) | 205 nC at VGS = -10 V | — |
| Reverse Transfer Capacitance (Crss) | 14.79 nF at 25 V | — |
| Continuous Power Dissipation (PD) at Tc | 136 W | — |
| Single-Pulse Avalanche Energy (EAS) | 78 mJ | — |
| ऑपरेटिंग जंक्शन तापमान | -55 °C to +175 °C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| पैकेज | PG-TO263-3 (D2PAK), 3-pin (2 + tab), surface mount | PG-TO263-3-2 (D2PAK) |
| MSL स्तर | MSL1 (260 °C peak reflow) | — |
| AEC-Q100/101 Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100 % avalanche tested | — |
| RoHS / Green | Green package, RoHS compliant | — |
| माउंटिंग प्रकार | Surface Mount (D2PAK, exposed tab) | Surface Mount |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB120P04P404ATMA2 |
| Series | — | OptiMOS-P2 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) @ Tc=25C | — | 120 A |
| On-Resistance (RDS(on)) @ VGS=-10V, ID=-100A | — | 3.8 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) @ VGS=-10V | — | 205 nC |
| Input Capacitance (Ciss) @ VDS=25V | — | 14,790 pF |
| Power Dissipation (PD) @ Tc=25C | — | 136 W |
| ऑपरेटिंग तापमान रेंज | — | -55 C to +175 C (TJ) |
| पिन काउंट | — | 3 (Tab + 2 Leads) |
| RoHS स्थिति | — | Compliant |