IPB35N10S3L26ATMA2 - 100V 35A N-Ch OptiMOS MOSFET | Infineon
MPN: IPB35N10S3L26ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.8 | $0.80 |
| 10 | $0.75 | $7.50 |
| 100 | $0.62 | $62.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.48 | $480.00 |
Drop-in alternatives for IPB35N10S3L26ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IPB35N10S3L26ATMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS Power-Transistor |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) at Tc | 35 A |
| Pulsed Drain Current | 180 A |
| Power Dissipation (Pd) at Tc | 71 W |
| RDS(on) (typical) | 26.3 mOhm |
| Package | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C |
| Number of Pins | 3 |
| RoHS Status | Compliant |
| Automotive Qualified | Yes (per Infineon product page classification) |
IPB35N10S3L26ATMA2 Pin Configuration
| Pin 1 | Gate — Gate control input (drive with respect to source) |
| Pin 2 | Drain — Drain terminal (electrically common with the exposed tab/backside) |
| Pin 3 | Source — Source terminal (reference for gate drive and main current return) |
Safe Operating Area (SOA) - DC
Typical Applications
IPB35N10S3L26ATMA2 is suitable for 6 applications: 48V Automotive Load Switches, Synchronous Rectifier DC-DC Converters, Motor Drive H-Bridge Half-Bridges, Battery Management and Protection, Solenoid and Relay Driver Outputs, Industrial Power Distribution Hot-Swap.
48V Automotive Load Switches
The IPB35N10S3L26ATMA2 is well matched to 48V automotive high-side load switches used in electric power steering, electric turbo actuators, and active suspension systems. Its 100V Vds rating provides more than 2x headroom over the 48V nominal bus, safely absorbing load-dump transients up to 70V. The 35A continuous drain current handles peak actuator currents typical of EPS motors, and the 26.3 mOhm RDS(on) keeps conduction losses under 2W at full load, eliminating the need for paralleling multiple MOSFETs. Per Infineon, the device is qualified to the automotive OptiMOS reliability standards.
Recommended
Synchronous Rectifier DC-DC Converters
The IPB35N10S3L26ATMA2 serves effectively as the synchronous rectifier (low-side) MOSFET in 48V-to-12V or 24V-to-5V buck converters for industrial and telecom power systems. With 26.3 mOhm RDS(on) and low Qg, the part minimizes both conduction and switching losses at 100 kHz to 500 kHz switching frequencies, achieving converter efficiencies above 96%. The 100V breakdown withstands ringing transients on the switch node, and the D2PAK package enables direct PCB heatsinking through the exposed tab. The integrated body diode supports synchronous rectification without external anti-parallel diodes.
Recommended
Motor Drive H-Bridge Half-Bridges
The IPB35N10S3L26ATMA2 fits H-bridge motor-drive topologies for industrial servo, robotics, and small-EV traction applications. Its 35A continuous rating supports fractional-horsepower motors up to ~1.5 kW, while the 100V rating covers 48V battery systems. The device's avalanche-rated body diode handles inductive flyback during PWM commutation, and the 71W power dissipation rating allows sustained operation at high PWM duty cycles with adequate PCB copper heatsinking. Infineon's automotive OptiMOS process provides the ruggedness needed for repetitive hard-switching.
Recommended
Battery Management and Protection
The IPB35N10S3L26ATMA2 is well suited as the high-side disconnect switch or pre-charge MOSFET in battery management systems (BMS) for 48V Li-ion battery packs. Its 100V rating covers the fully-charged 56V pack voltage plus transient overshoot. The low 26.3 mOhm RDS(on) minimizes voltage drop across the disconnect path, preserving battery capacity during discharge. The 180A pulsed current capability handles inrush currents during capacitor bank pre-charge, and the surface-mount D2PAK package enables automated assembly for high-volume battery-pack production.
Recommended
Solenoid and Relay Driver Outputs
The IPB35N10S3L26ATMA2 functions as a high-current low-side driver for solenoids, relays, and contactors in industrial automation and automotive body-control modules. The 35A continuous current rating covers large DC contactors used in EV main battery disconnect, while the 26.3 mOhm RDS(on) limits dissipation to under 2W for sustained loads. The integrated body diode provides a freewheeling path for inductive loads, eliminating external flyback diodes. The D2PAK package's thermal performance supports high-duty-cycle PWM solenoid drive profiles common in transmission and brake-by-wire systems.
Recommended
Industrial Power Distribution Hot-Swap
The IPB35N10S3L26ATMA2 is appropriate for hot-swap controllers in 48V industrial power distribution backplanes. Its 100V rating covers 48V nominal with full transient protection, while the 35A continuous current handles typical board-level loads. The device acts as the inrush-limiting element, with its 26.3 mOhm RDS(on) controlling the dV/dt of bulk capacitor charging during hot-plug events. The automotive-grade OptiMOS reliability ensures long-term operation in 24/7 industrial environments. Per Infineon, the part's SOA curve supports repetitive surge currents during hot-plug transients.
Recommended
Recommended Products Summary
Engineering reference data for IPB35N10S3L26ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB35N10S3L26ATMA1 | IAUC60N10S5L110ATMA1 | IAUCN10S5L110TATMA1 | IPD50N04S408ATMA1 | IQE013N04LM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (Vds) | 100 V | 100 V | 100 V | 100 V | 40 V | 40 V | 120 V |
| Continuous Drain Current (Id) | 35 A | 35 A | 60 A | 60 A | 50 A | 100 A | 100 A |
| RDS(on) typical | 26.3 mOhm | 26.3 mOhm | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 1.3 mOhm | 3.7 mOhm |
| Power Dissipation (Pd) | 71 W | 71 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Process Technology | OptiMOS (Automotive) | OptiMOS (Automotive) | OptiMOS 5 | OptiMOS 5 | OptiMOS | StrongIRFET | StrongIRFET |
| Operating Temperature Range | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C |
Key Differentiators
- Higher continuous current rating in same D2PAK footprint (vs IPD50N04S408ATMA1)
- Automotive-grade OptiMOS qualification (vs ISC037N12NM6ATMA1)
- Lower cost for 48V-targeted designs (vs IAUC60N10S5L110ATMA1)
Design Notes
Estimated: at continuous 35A and 26.3 mOhm RDS(on), conduction loss is approximately P = I^2 x R = 35^2 x 0.0263 = 32.2W. The D2PAK package's exposed tab should be soldered to a minimum of 1 square inch of 2oz copper pour on the PCB, plus thermal vias to an internal ground plane, to keep junction temperature rise below 50C above ambient. Without adequate heatsinking, junction temperature can exceed 175C maximum at full load, triggering thermal shutdown or long-term reliability degradation.
For switching applications above 50 kHz, minimize the gate-drive loop area by placing the gate-driver IC directly adjacent to the MOSFET gate pin, and use a Kelvin connection to the source pin for high-side configurations. The drain-source switching loop (drain tab to load to ground to source) must also be minimized to limit parasitic inductance and voltage overshoot. Add a small RC snubber (10 ohm + 1 nF) across drain-source if ringing exceeds 20% of Vds during switching transitions.
Do not exceed Vgs of +/-20V absolute maximum - typical gate drive is 10V for full RDS(on) enhancement. Below Vgs(th) (typically 2V to 4V), the MOSFET operates in linear region with high dissipation. For 48V automotive applications, always include a gate-source Zener clamp (15V to 18V) to protect against Vgs transients from drain-dv/dt coupling through the Miller capacitance. Verify avalanche rating (EAS) from the datasheet before subjecting the part to unclamped inductive switching.
Compliance Information
AEC-Q100 qualified per Infineon OptiMOS automotive family classification. RoHS compliant. Lead-free reflow-compatible. Halogen-free status not explicitly stated in verified data.
