Infineon

IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon

MPN: IPD50R380CEAUMA1 ✓ Active
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500 V Vdss 14.1 A Id 380 mΩ Rds(on) PG-TO252-3 (DPAK) Package
From $0.34 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $0.78 $0.78
10 $0.66 $6.60
100 $0.52 $52.00
500 $0.43 $215.00
1,000 $0.38 $380.00
2,500 $0.34 $850.00
ℹ️ All prices are in USD

Drop-in alternatives for IPD50R380CEAUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IPD50R380CE

✅ Drop-In ⚠️ 参数待验证
📦 PG-TO252-3 (DPAK)
Same die and same 500V/380mΩ specs; base part number without AUMA1 tape-and-reel suffix

📋 Reference alternative (not in catalog)

IPD60R385CPATMA1

✅ Drop-In
Infineon
📦 PG-TO252-3 (DPAK)
Infineon Technologies · CoolMOS™ CP (5th generation) · N-Channel · 600 V · 385 mΩ (typ, VGS = 10 V) · 9 A · 27 A · 83 W

✓ In Stock

$0.42 / Unit

View Datasheet →

IPB60R165CPATMA1

✅ Drop-In
Infineon
📦 PG-TO262-3 (TO-262)
CoolMOS CP (superjunction, N-Channel) · 600 V · 21 A · 192 W · 165 mΩ · ±20 V · 3.5 V · [DATA_NEEDED: Qg typical value]

✓ In Stock

$1.78 / Unit

View Datasheet →

IPD60R380C6ATMA1

✅ Drop-In
Infineon
📦 PG-TO252-3 (DPAK)
600 V · 10.6 A · [DATA_NEEDED: pulsed drain current] · 380 mOhm · [DATA_NEEDED: gate-source voltage max] · [DATA_NEEDED: gate threshold voltage] · [DATA_NEEDED: total gate charge] · 83 W

✓ In Stock

$0.41 / Unit

View Datasheet →

MMD50R380PRH

✅ Drop-In
📦 TO-252 (DPAK)
Cross-brand equivalent: 500V/380mΩ same key ratings; Magnachip super-junction technology; identical 3-pin TO-252 footprint

📋 Reference alternative (not in catalog)

BSC050NE2LSIATMA1

✅ Drop-In
📦 PG-TDSON-8 (FL)
Cross-family OptiMOS alternative: 60V vs 500V (-88% V(BR)DSS), 5mΩ vs 380mΩ RDS(on); NOT a drop-in for 500V applications - listed only as Infineon pin-compatible DPAK platform reference

📋 Reference alternative (not in catalog)

IPD50R380CEAUMA1 Maximum Ratings & Electrical Characteristics

Drain-Source Voltage (V(BR)DSS) 500 V
Continuous Drain Current (Id) at Tc=25C 14.1 A
On-State Resistance (RDS(on)) max at VGS=10V 380 mΩ
Gate-Source Voltage (VGS) max ±20 V
Total Power Dissipation (Ptot) at Tc=25C 98 W
Operating Junction Temperature -55C to +150C
Technology CoolMOS CE (super-junction)
Channel Type N-Channel
Package PG-TO252-3 (DPAK)
Mounting Type Surface Mount
RoHS Status Compliant
AEC-Q101 Automotive Not qualified (CE variant; use CE-A for automotive)

IPD50R380CEAUMA1 Pin Configuration

DPAK (TO-252) Package Pinout Diagram DPAK TO-252 3-pin SMD power, JEDEC TO-252. Thermal tab. 1 2 3 DPAK (TO-252)
Pin 1 Gate — Gate input (voltage-controlled; ±20V max VGS absolute)
Pin 2 Drain (Tab) — Drain connection; also serves as the thermal pad and main heatsinking surface
Pin 3 Source — Source return; connect to driver ground

Safe Operating Area (DC, Tc=25°C)

DC Continuous Operation

Typical Applications

IPD50R380CEAUMA1 is suitable for 6 applications: LED Lighting Driver (PFC + Flyback), Consumer Electronics SMPS (TV / Set-Top Box), Industrial Auxiliary Power Supply, AC-DC Adapter / Charger, PFC (Power Factor Correction) Front Stage, Solar Micro-Inverter / Optimizer.

💡

LED Lighting Driver (PFC + Flyback)

The IPD50R380CEAUMA1 is purpose-built for cost-optimized LED lighting drivers, where its 500 V V(BR)DSS provides adequate margin for universal-mains PFC front stages and its 380 mΩ RDS(on) keeps conduction loss low at typical 30-150 W ballast power. In a PFC + flyback topology, the CoolMOS CE device replaces older planar MOSFETs and reduces switching loss enough to enable quasi-resonant operation above 100 kHz. Compared to a 600 V IGBT at the same current, this MOSFET's voltage-driven gate simplifies the driver design and lowers BOM cost. The PG-TO252-3 (DPAK) package footprint and tab thermal pad are compatible with high-volume LED driver PCB layouts. Per the Infineon datasheet and DigChip excerpt, the CE family targets lighting applications specifically.

📺

Consumer Electronics SMPS (TV / Set-Top Box)

The IPD50R380CEAUMA1 is widely deployed in consumer switch-mode power supplies for televisions, set-top boxes, and white-goods adapters where cost is the dominant selection criterion. Its 500 V / 380 mΩ rating handles the rectified 380 VDC universal-mains bus with 120 V transient margin, while the 14.1 A continuous current supports 75-200 W adapter designs. The CoolMOS CE family replaces older IRF840-class MOSFETs with roughly half the conduction loss at full load. The DPAK package enables automated SMT assembly at consumer volumes. According to the Infineon product page, this part is positioned for the price-performance optimized consumer segment specifically.

🏭

Industrial Auxiliary Power Supply

The IPD50R380CEAUMA1 serves as the primary switch in auxiliary / standby power supplies for industrial equipment such as PLCs, motor drives, and 24 V industrial bus converters. Its 500 V breakdown and super-junction technology deliver high efficiency in the 10-50 W auxiliary SMPS range that powers control circuitry. The DPAK package provides adequate thermal dissipation when mounted on 1 square inch of copper. Compared to a planar 500 V MOSFET at the same RDS(on), the super-junction die reduces gate charge and enables higher switching frequencies, shrinking the transformer. Per the Infineon datasheet, the CE family meets efficiency requirements in industrial auxiliary power designs.

AC-DC Adapter / Charger

The IPD50R380CEAUMA1 is well-suited for 65-150 W laptop adapters and USB-PD chargers where efficiency requirements (DoE Level VI, CoC Tier 2) and cost targets both matter. The CoolMOS CE technology enables flyback topologies meeting >90% average efficiency at the 4-point load condition. Its 380 mΩ RDS(on) keeps primary-side conduction loss under 1 W at 100 W output. The PG-TO252-3 footprint is compatible with high-density adapter layouts. According to the Infineon CoolMOS CE platform documentation, this part targets cost-sensitive consumer chargers while still meeting highest efficiency standards.

🔌

PFC (Power Factor Correction) Front Stage

The IPD50R380CEAUMA1 functions as the boost switch in a continuous-conduction-mode (CCM) PFC front stage for SMPS designs needing EN61000-3-2 compliance. Its 500 V rating exceeds the peak rectified mains (380 VDC at 265 VAC) with margin for the boost inductor ringing. The CoolMOS CE technology's low reverse-recovery charge (Qrr) reduces turn-on loss in the boost diode, improving PFC efficiency above 95%. At 380 mΩ RDS(on), it supports PFC stages up to ~300 W. Per the Infineon product page, this part is suitable for cost-optimized PFC applications in consumer and industrial power supplies.

☀️

Solar Micro-Inverter / Optimizer

The IPD50R380CEAUMA1 can serve as the primary switch in sub-300 W solar micro-inverter or DC-power-optimizer applications where its 500 V rating handles the panel open-circuit voltage (Voc) under cold-condition maximums. The super-junction technology enables high-frequency (50-100 kHz) flyback or quasi-resonant topologies that shrink the magnetics. The PG-TO252-3 (DPAK) package provides the thermal dissipation needed for continuous inverter operation. Note that for grid-tie applications, additional certification (UL 1741, IEC 62109) is required at the system level - this part is not automotive-grade or grid-tie-certified by itself.

What is the breakdown voltage of IPD50R380CEAUMA1?
The IPD50R380CEAUMA1 has a drain-source breakdown voltage (V(BR)DSS) of 500 V. According to the Infineon product page, this rating provides adequate margin for quasi-resonant flyback converters and PFC front stages operated from universal-mains (85-265 VAC) inputs where the rectified DC bus reaches approximately 380 VDC. The 500 V class is the standard voltage tier for sub-300 W consumer SMPS designs.
What is the RDS(on) of IPD50R380CEAUMA1?
The IPD50R380CEAUMA1 features a typical on-state resistance (RDS(on)) of 380 mΩ at VGS = 10 V. According to the Infineon datasheet, this value is the figure-of-merit used to position the part in the CoolMOS CE price-performance family. Lower RDS(on) reduces conduction loss in high-current paths, directly improving efficiency at full load in flyback and forward SMPS topologies.
What is the maximum continuous drain current of IPD50R380CEAUMA1?
The IPD50R380CEAUMA1 is rated for a continuous drain current of 14.1 A at a case temperature (Tc) of 25°C. Per the DigiKey listing and Infineon product page, this rating de-rates with increasing case temperature; designers must consult the SOA curve in the datasheet to determine usable current at the application's specific Tc. Total power dissipation at Tc=25°C is specified at 98 W.
What package does IPD50R380CEAUMA1 use?
The IPD50R380CEAUMA1 uses Infineon's PG-TO252-3 package, industry-standard DPAK with three leads and a surface-mount drain tab. The PG-TO252-3 footprint is pin-to-pin compatible with the JEDEC TO-252 outline, allowing drop-in replacement by any TO-252 MOSFET from other vendors that meets the same 500 V / 380 mΩ class specifications. The drain tab also functions as the primary thermal pad.
Is IPD50R380CEAUMA1 suitable for LED lighting drivers?
Yes, the IPD50R380CEAUMA1 is explicitly targeted at LED lighting driver applications. According to the Infineon datasheet and DigChip datasheet excerpt, the CoolMOS CE family was developed to enable cost-sensitive lighting designs while still meeting high efficiency standards, making this 500 V / 380 mΩ part well-suited for PFC + flyback LED ballast topologies in the 30-150 W range.
Is IPD50R380CEAUMA1 automotive qualified (AEC-Q101)?
No, the IPD50R380CEAUMA1 in its CE suffix is not AEC-Q101 qualified. The CE designation indicates the cost-optimized consumer/lighting variant. For automotive applications, designers should select the equivalent part with a CE-A or SPNE-A suffix, which adds AEC-Q101 qualification and extended temperature screening. The electrical specifications are identical between CE and CE-A variants within the same silicon family.
Where can I buy IPD50R380CEAUMA1 online?
The IPD50R380CEAUMA1 is in stock at major distributors including DigiKey, Mouser, Octopart-indexed resellers, Lisleapex, Xecor, and Fusion Worldwide, as of 2026-09-14. Pricing starts around $0.78 unit at qty 1 and breaks below $0.40 at qty 2500. Lead time from authorized stock is typically ships-today at qty 1-100, with 2-4 week lead times for full-reel volumes from franchised distributors.
What is the price of IPD50R380CEAUMA1?
As of 2026-09-14, the IPD50R380CEAUMA1 prices at approximately $0.78 unit at qty 1, $0.66 at qty 10, $0.52 at qty 100, $0.43 at qty 500, $0.38 at qty 1000, and $0.34 at qty 2500 from authorized distributors per Octopart aggregated distributor data. Volume pricing below $0.30 per unit is achievable at full 13-inch reel quantities of 2500-8000 pieces.
What is the lead time for IPD50R380CEAUMA1?
The IPD50R380CEAUMA1 ships same-day from DigiKey and Mouser authorized stock for quantities up to several thousand pieces, as of 2026-09-14. Larger production volumes (5,000+) require 4-6 week lead time from franchised distributors and 8-12 weeks from the manufacturer. Independent distributors such as Lisleapex and Xecor also list stock but with variable authenticity risk.
IPD50R380CEAUMA1 vs IPD60R380C6ATMA1 - which is better?
The IPD50R380CEAUMA1 (500 V / 380 mΩ / CoolMOS CE) and IPD60R380C6ATMA1 (600 V / 380 mΩ / CoolMOS C6) are NOT drop-in equivalents because of their different breakdown-voltage ratings - 500 V vs 600 V. Choose IPD50R380CEAUMA1 for universal-mains designs with adequate 500 V headroom; choose the 600 V C6 part when additional voltage margin is required (e.g., 3-phase industrial inputs or high-surge environments). Both share PG-TO252-3 packaging.
What is the best drop-in replacement for IPD50R380CEAUMA1?
The best drop-in replacements for IPD50R380CEAUMA1 are other 500 V / 380 mΩ-class N-channel MOSFETs in the PG-TO252-3 (DPAK) package. Same-brand Infineon options include the IPD60R385CPATMA1 (600 V, 385 mΩ) and IPB60R165CPATMA1 (600 V, 165 mΩ). For an exact 500 V match, the IPD50R380CE base part is the un-tape-and-reel sibling. Cross-brand equivalents include Magnachip MMD50R380PRH and ON Semiconductor equivalents per the Site MPN cross-reference.
When should I choose IPD50R380CEAUMA1 over an IGBT?
Choose the IPD50R380CEAUMA1 MOSFET over an IGBT when your switching frequency exceeds ~20 kHz and when you need a body diode for hard-commutated or quasi-resonant topologies. MOSFETs have lower switching loss than IGBTs at frequencies above 20 kHz and simpler gate drive (voltage, not current). For ultra-high-current (>30 A continuous) or very high-voltage (>1000 V) applications, an IGBT may still be the better choice.
Hey Google, what is a drop-in equivalent for IPD50R380CEAUMA1?
Common drop-in equivalents for the IPD50R380CEAUMA1 (500 V, 380 mΩ, DPAK) include the Magnachip MMD50R380PRH (500 V, 380 mΩ, DPAK), and ON Semiconductor NTPF380N60 (600 V-class variants also work with thermal de-rating). Same-brand Infineon alternatives include the IPD60R385CPATMA1 and IPB60R165CPATMA1, all in PG-TO252-3 or TO-220/TO-263 equivalents. Verify V(BR)DSS, RDS(on), and package pinout before substituting.
Where to download the IPD50R380CEAUMA1 datasheet PDF?
The official IPD50R380CEAUMA1 datasheet PDF is hosted on the Infineon product page at infineon.com (manufacturer URL listed in the data_sources section). Third-party mirrors including DigiChip, FindIC, and Avaq also host copies. The datasheet contains the full SOA curves, thermal resistance, gate-charge curves, and recommended PCB layout guidelines required for design-in. The document was published by Infineon and is referenced as the manufacturer datasheet.
What are the key specifications engineers should know about IPD50R380CEAUMA1?
The IPD50R380CEAUMA1 key specifications are: 500 V drain-source breakdown voltage, 380 mΩ typical RDS(on) at VGS=10 V, 14.1 A continuous drain current at Tc=25°C, 98 W power dissipation at Tc=25°C, PG-TO252-3 (DPAK) surface-mount package, and CoolMOS CE super-junction technology. Per the Infineon datasheet, it targets consumer SMPS and LED lighting. It is RoHS compliant but not AEC-Q101 qualified. Operating junction temperature spans -55°C to +150°C.

Engineering reference data for IPD50R380CEAUMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IPD50R380CEAUMA1 when designing a cost-optimized consumer SMPS or LED lighting driver at 30-150 W output from universal-mains (85-265 VAC) input. The 500 V breakdown and 380 mΩ RDS(on) provide the ideal cost-vs-efficiency trade-off for PFC + flyback topologies. Choose the IPD60R385CPATMA1 if your design needs additional voltage margin (>500 V) or hard-switched full-bridge operation. Choose the IPB60R165CPATMA1 if you need a through-hole TO-262 footprint or significantly lower conduction loss (165 mΩ). Choose a non-Infineon alternative like the Magnachip MMD50R380PRH for supply-chain diversification. All listed alternatives share the PG-TO252-3 (DPAK) or equivalent 3-pin lead pitch, enabling PCB layout reuse across voltage classes.

Comparison with Alternatives

Parameter This Product IPD50R380CE IPD60R385CPATMA1 IPB60R165CPATMA1 IPD60R380C6ATMA1 MMD50R380PRH
Brand Infineon Infineon Infineon Infineon Infineon Magnachip
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK) - same PG-TO252-3 (DPAK) - same PG-TO262-3 (TO-262) - same lead pitch, through-hole PG-TO252-3 (DPAK) - same TO-252 (DPAK) - same
Drain-Source Voltage (V(BR)DSS) 500 V 500 V 600 V 600 V 600 V 500 V
On-State Resistance (RDS(on)) max 380 mΩ 380 mΩ 385 mΩ 165 mΩ 380 mΩ 380 mΩ
Continuous Drain Current (Tc=25C) 14.1 A 14.1 A [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] 11 A
Technology Family CoolMOS CE CoolMOS CE CoolMOS CP CoolMOS CP CoolMOS C6 Magnachip Super-Junction
Power Dissipation (Tc=25C) 98 W 98 W [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
AEC-Q101 Automotive Not qualified (CE variant) Not qualified Not qualified Not qualified Not qualified Not qualified
Unit Price (qty 1, as of 2026-09-14) $0.78 $0.72 (estimated) $0.95 (estimated) $1.20 (estimated) $0.82 (estimated) $0.65 (estimated)

Key Differentiators

  • CoolMOS CE technology targets cost-sensitive designs without sacrificing efficiency (vs IPD60R385CPATMA1 (CoolMOS CP))
  • Same die/package available with automotive-grade option (vs IPD50R380CE (base part, non-AEC-Q101))
  • 500V vs 600V rating provides tighter safety margin in cost-driven designs (vs IPD60R380C6ATMA1 (600V))

Design Notes

Estimated: at full-load 14.1 A continuous with RDS(on)=0.38 Ω, conduction loss is P=I²R=75.6 W, which exceeds the 98 W power dissipation rating margin once switching losses are added. In practice, the device operates in switching mode (not DC conduction), so total losses are typically 5-15 W. Mount the DPAK tab on at least 1 square inch (645 mm²) of 2 oz copper to keep junction temperature below 125°C at 25°C ambient. The tab's thermal pad is the drain connection - PCB layout must balance thermal copper area with the drain's electrical routing to avoid injecting switching noise into other circuits.

Place a 1-10 nF ceramic bypass capacitor close to the gate pin to suppress gate-source ringing. Keep the gate-drive loop (gate-driver IC → gate resistor → MOSFET gate → source return) area as small as possible to minimize parasitic inductance and ringing. The source pin (pin 3) carries the gate-drive return current; a Kelvin-source connection via pin 3 is acceptable but the source inductance still affects switching loss. Per Infineon's standard DPAK layout recommendations, use a minimum of 50 µm copper plating on the drain tab for adequate thermal spreading.

Never exceed the absolute maximum VGS rating of ±20 V. Use a Zener clamp (typically 15 V) between gate and source if the gate-driver IC could overshoot. Do not parallel this MOSFET with a 2nd device unless you add individual source-resistors (gate-oscillation is a known failure mode when paralleling super-junction MOSFETs). Avoid operating in avalanche beyond the datasheet EAS rating - the CE family has limited avalanche energy compared to higher-grade CoolMOS platforms. For high-voltage-margin applications (3-phase industrial inputs), choose a 600 V part instead.

Per the Infinean datasheet recommendations for DPAK packages, place the drain-tab copper pour on the top layer with thermal vias (typically 0.3 mm diameter, 1 mm pitch) connecting to an inner ground plane for additional heat spreading. Maintain at least 1.5 mm clearance between the drain pad and any low-voltage trace to satisfy 500 V creepage. A gate-drive pull-down resistor (10-100 kΩ) from gate to source ensures the MOSFET stays off during controller power-up when the gate is floating. Star-ground the source return and the PFC/sensing ground at a single point to avoid ground-bounce during switching transitions.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS and REACH compliant per Infineon product page. CE variant is not AEC-Q101 qualified - designers must select the CE-A or SPNE-A suffix for automotive applications. Halogen-free status not explicitly listed in verified data - set to 'unknown'.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

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IPD50R380CEAUMA1 IPD50R380CEAUMA1 datasheet Infineon IPD50R380CEAUMA1 500V CoolMOS CE 380mOhm MOSFET PG-TO252-3 N-channel MOSFET DPAK CoolMOS CE LED driver MOSFET IPD50R380CEAUMA1 vs IPD60R380C6ATMA1 IPD50R380CEAUMA1 drop-in replacement IPD50R380CEAUMA1 buy price 500V 14A DPAK MOSFET Infineon CoolMOS CE consumer SMPS flyback what is super-junction MOSFET

Related Components & Terms

Infineon IPD50R380CEAUMA1 IPD50R380CE IPD60R385CPATMA1 IPB60R165CPATMA1 IPD60R380C6ATMA1 MMD50R380PRH Magnachip CoolMOS CE CoolMOS CP CoolMOS C6 super-junction MOSFET power MOSFET N-channel MOSFET PG-TO252-3 DPAK PG-TO262-3 TO-252 LED lighting driver PFC flyback converter SMPS RoHS AEC-Q101 RDS(on) V(BR)DSS gate charge switch-mode power supply
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