IPB60R280P7ATMA1 vs IPL60R085P7AUMA1 Comparison

Detailed side-by-side comparison of IPB60R280P7ATMA1 by Infineon and IPL60R085P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL60R085P7AUMA1 IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 ✓ Active

Specification Comparison

Parameter IPB60R280P7ATMA1 IPL60R085P7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.88 $2.65
Manufacturer Infineon Technologies —
Product Family CoolMOS P7 (600 V) —
Transistor Type N-Channel MOSFET —
Technology Superjunction (SJ) CoolMOS P7 superjunction (7th generation)
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 12 A —
On-Resistance R_DS(on) max (V_GS=10V) 280 mOhm —
Gate-Source Threshold V_GS(th) typ 3.5 V —
Power Dissipation P_D (T_C=25°C) 53 W —
Package PG-TO263-3 (D2PAK) PG-VSON-4 (VSON-4, source-down)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) —
Operating Temperature Range -55 °C to +150 °C (T_j max) —
Configuration Single N-Channel —
RoHS Status Compliant Compliant
Lead-Free Yes —
Generation 7th Gen CoolMOS (successor to P6) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 39 A
Continuous Drain Current (ID, Tc=100°C) — 24 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 85 mΩ at VGS=10 V
Gate Threshold Voltage (VGS(th)) — 3.5 V
Maximum Power Dissipation (Ptot) — 154 W
Operating Junction Temperature — -40 °C to +150 °C
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
ESD Robustness (HBM) — >2 kV (all pins)
Qualification — JEDEC industrial
Polarity — N-channel

Datasheets & Resources

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