IPB60R280P7ATMA1 vs IPL60R085P7AUMA1 对比
详细并排对比 IPB60R280P7ATMA1 出自 Infineon 和 IPL60R085P7AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB60R280P7ATMA1 | IPL60R085P7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $2.65 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 (600 V) | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | CoolMOS P7 superjunction (7th generation) |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| 封装 | PG-TO263-3 (D2PAK) | PG-VSON-4 (VSON-4, source-down) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (2 + Tab) | — |
| 工作温度范围 | -55 °C to +150 °C (T_j max) | — |
| Configuration | Single N-Channel | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 39 A |
| Continuous Drain Current (ID, Tc=100°C) | — | 24 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 85 mΩ at VGS=10 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Maximum Power Dissipation (Ptot) | — | 154 W |
| 工作结温 | — | -40 °C to +150 °C |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| ESD Robustness (HBM) | — | >2 kV (all pins) |
| Qualification | — | JEDEC industrial |
| Polarity | — | N-channel |