IPC100N04S52R8ATMA1 vs IAUC60N04S6L030HATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC100N04S52R8ATMA1 disebabkan oleh Infineon dan IAUC60N04S6L030HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPC100N04S52R8ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Tc=100C) | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typical] | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 2.8 mOhm | — |
| On-State Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| Power Dissipation (PD, Tc=25C) | 75 W | — |
| Suhu Hubungan Operasi | -55C to +175C | -55 C to +175 C |
| Kemasan | PG-TDSON-8-34 (TDSON-8 EP) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per part number suffix) |
| Avalanche Tested | 100% (per Infineon standard) | — |
| RoHS / Green Product | Yes (RoHS compliant) | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Status RoHS | — | Compliant |