IPC100N04S5L1R5ATMA1 vs IAUCN04S7L014ATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S5L1R5ATMA1 by Infineon and IAUCN04S7L014ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β Active
Specification Comparison
| Parameter | IPC100N04S5L1R5ATMA1 | IAUCN04S7L014ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | β |
| Polarity / Channel Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) Max | 40 V | β |
| Gate-Source Voltage (VGS) Max | 20 V | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Power Dissipation (PD) at Tc=25C | 115 W | β |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | β |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | β |
| Operating Temperature Range | -55C to +175C | -55Β°C to +175Β°C (typical automotive MOSFET range) |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (TDSON EP, 8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260C peak reflow) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualified | Yes | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | β |
| Series | β | OptiMOS 5 40V Automotive |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) | β | 120 A |
| On-Resistance RDS(on) Max | β | 1.43 mΞ© |
| Gate Threshold Voltage | β | [DATA_NEEDED: Gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Total gate charge Qg] |
| Power Dissipation (Pd) | β | [DATA_NEEDED: Power dissipation Pd] |
| Qualification | β | AEC-Q101 (Automotive) |
| Configuration | β | Single N-Channel MOSFET |