IPC100N04S5L1R5ATMA1 vs IAUCN04S7L014ATMA1 对比

详细并排对比 IPC100N04S5L1R5ATMA1 出自 Infineon 和 IAUCN04S7L014ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ 量产中
Infineon
IAUCN04S7L014ATMA1 IAUCN04S7L014ATMA1 - 40V 120A OptiMOS N-MOSFET | Infineon

IAUCN04S7L014ATMA1 - 40V 120A OptiMOS N-MOSFET | Infineon

IAUCN04S7L014ATMA1 ✓ 量产中

规格对比

参数 IPC100N04S5L1R5ATMA1 IAUCN04S7L014ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $1.38
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 40 V —
Polarity / Channel Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) Max 40 V —
Gate-Source Voltage (VGS) Max 20 V —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation (PD) at Tc=25C 115 W —
On-Resistance RDS(on) at VGS=10 V 1.5 mOhm (typ) —
On-Resistance RDS(on) at VGS=4.5 V 1.8 mOhm (typ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ] —
工作温度范围 -55C to +175C -55°C to +175°C (typical automotive MOSFET range)
封装 PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (TDSON EP, 8-pin)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (260C peak reflow) 1 (per JEDEC J-STD-020)
AEC-Q101 Qualified Yes —
RoHS 状态 Compliant (Green Product) Compliant
Avalanche Tested 100% —
Series — OptiMOS 5 40V Automotive
FET Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) — 120 A
On-Resistance RDS(on) Max — 1.43 mΩ
栅极阈值电压 — [DATA_NEEDED: Gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: Total gate charge Qg]
Power Dissipation (Pd) — [DATA_NEEDED: Power dissipation Pd]
Qualification — AEC-Q101 (Automotive)
Configuration — Single N-Channel MOSFET

数据手册与资源

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