IPC100N04S5L1R5ATMA1 vs IAUCN04S7L014ATMA1 Сравнение
Подробное сравнение бок о бок IPC100N04S5L1R5ATMA1 от Infineon и IAUCN04S7L014ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ Активен
Сравнение характеристик
| Параметр | IPC100N04S5L1R5ATMA1 | IAUCN04S7L014ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,18 | $1,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Диапазон рабочих температур | -55C to +175C | -55°C to +175°C (typical automotive MOSFET range) |
| Корпус | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (TDSON EP, 8-pin) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | MSL1 (260C peak reflow) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualified | Yes | — |
| Статус RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Series | — | OptiMOS 5 40V Automotive |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 120 A |
| On-Resistance RDS(on) Max | — | 1.43 mΩ |
| Пороговое напряжение затвора | — | [DATA_NEEDED: Gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Total gate charge Qg] |
| Power Dissipation (Pd) | — | [DATA_NEEDED: Power dissipation Pd] |
| Qualification | — | AEC-Q101 (Automotive) |
| Configuration | — | Single N-Channel MOSFET |