IPC100N04S5L1R5ATMA1 vs IAUCN04S7L014ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPC100N04S5L1R5ATMA1 sa pamamagitan ng Infineon at IAUCN04S7L014ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPC100N04S5L1R5ATMA1 | IAUCN04S7L014ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55°C to +175°C (typical automotive MOSFET range) |
| Packhaging | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (TDSON EP, 8-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (260C peak reflow) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualified | Yes | — |
| Tindminan RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Series | — | OptiMOS 5 40V Automotive |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 120 A |
| On-Resistance RDS(on) Max | — | 1.43 mΩ |
| Threshold na Voltage ng Gate | — | [DATA_NEEDED: Gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Total gate charge Qg] |
| Power Dissipation (Pd) | — | [DATA_NEEDED: Power dissipation Pd] |
| Qualification | — | AEC-Q101 (Automotive) |
| Configuration | — | Single N-Channel MOSFET |