BSC011N03LSTATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
MPN: BSC011N03LSTATMA1 ✗ End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.57 | $2.57 |
| 10 | $2.31 | $23.10 |
| 100 | $2.05 | $205.00 |
| 500 | $1.79 | $895.00 |
| 1,000 | $1.55 | $1,550.00 |
BSC011N03LSTATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) is a voltage-controlled majority-carrier device that switches resistive loads by modulating channel conductance under the gate oxide. N-channel power MOSFETs are the dominant switching element in low-voltage (<100V) synchronous buck converters, motor drives, and load switches, sitting in the device hierarchy MOSFET -> FET -> transistor -> discrete semiconductor. The "OptiMOS" low-voltage family from Infineon emphasizes low RDS(on) per unit area, low gate charge (Qg typ 72 nC), and low Figure of Merit (FOM = RDS(on) x Qg) to maximize DC-DC converter efficiency.
Distinguishing features include an ultra-low 1.1 mOhm RDS(on) at 10V VGS that minimizes conduction loss, an integrated Schottky-like body diode optimized for synchronous rectification, and the TDSON-8 FL package with an exposed cooling pad delivering roughly 1C/W junction-to-case thermal resistance. The 72 nC total gate charge enables MHz switching with low driver loss, and the +/-20V VGS rating gives margin against gate-driver transients on 12V rails.
The internal cell structure uses Infineon's trench MOSFET technology to shrink the cell pitch below 1 micron, packing more silicon per mm2 and driving RDS(on) into the sub-mOhm range without sacrificing avalanche ruggedness. The device is rated for 100% UIS (avalanche) testing.
Typical applications include synchronous rectification in 12V buck converters for server/datacenter VRMs, battery protection in battery management systems (BMS), OR-ing diodes in redundant -48V telecom supplies, motor drive H-bridges below 30V, and hot-swap controllers in enterprise SSDs and network switches.
When designing with this part, observe strict gate-drive layout: keep the gate loop (driver -> gate -> source) under 1 cm to suppress ringing, and place a 10-100 Ohm gate resistor between the driver and the gate pin to damp the miller plateau. The exposed pad MUST be soldered to a copper area of at least 6 cm2 to stay within the datasheet SOA.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for BSC011N03LSTATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC011N03LSTATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), MSL Level, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC019N04LSGATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC050N04LSGATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →BSC12DN20NS3GATMA1
✅ Drop-In✓ In Stock
$0.61 / Unit
View Datasheet →IPC50N04S5L5R5ATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →ISC011N04NM7VATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.41 / Unit
View Datasheet →BSC011N03LSTATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 39 A |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Total Gate Charge (Qg) typ | 72 nC |
| Power Dissipation at TA=25C | 3 W |
| Power Dissipation at TC=25C | 115 W |
| Operating Junction Temperature | -55C to +150C |
| Package | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| Mounting Type | Surface Mount |
| Technology | Trench MOSFET |
| Configuration | Single with built-in diode |
| RoHS Status | Compliant |
BSC011N03LSTATMA1 Pin Configuration
| Pin 1 | Source — Source (internally bonded with pins 2-3-5-8) |
| Pin 2 | Source — Source (internally bonded) |
| Pin 3 | Source — Source (internally bonded) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source (internally bonded) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | Drain — Drain (also connected to exposed pad) |
| Pin 8 | Source — Source (internally bonded) |
| Pin PAD | Drain — Exposed drain pad for thermal dissipation |
Safe Operating Area (DC, TC=25C)
Typical Applications
BSC011N03LSTATMA1 is suitable for 6 applications: 12V Synchronous Buck Converter (VRM), Battery Management System (BMS) Protection, OR-ing Diode for Redundant Telecom Supplies, Hot-Swap / Inrush Current Limiter, Low-Voltage Motor Drive H-Bridge, Power Path Switch in SSDs / Storage.
12V Synchronous Buck Converter (VRM)
BSC011N03LSTATMA1 serves as the low-side synchronous rectifier in 12V-to-1V to 5V buck converters powering server CPUs, GPUs, and DDR memory rails. The part's 1.1 mOhm max RDS(on) at 10V VGS keeps conduction loss under 1W at 30A continuous, and its 72 nC Qg supports up to 1 MHz switching without exceeding driver capability. When paired with the high-side BSC190N15NS3, the converter achieves peak efficiency above 95%. Designers should switch to the BSC019N04LSGATMA1 successor for new 12V designs requiring additional transient margin.
Recommended
Battery Management System (BMS) Protection
BSC011N03LSTATMA1 is suitable for the high-side or low-side disconnect FET in 1S to 4S Li-ion battery packs, where its 30V VDS handles up to 12.6V fully charged 3S packs with margin. The 100A continuous rating easily handles peak discharge currents of 20-40A common in e-bike and power-tool packs. Its low RDS(on) of 1.1 mOhm keeps voltage drop across the protection FET under 50 mV at 30A, preserving battery efficiency. For higher voltage 4S configurations the 40V BSC019N04LSGATMA1 is preferred.
Recommended
OR-ing Diode for Redundant Telecom Supplies
BSC011N03LSTATMA1 is widely deployed as the active OR-ing MOSFET in -48V telecom power shelves where two rectifiers feed a common bus. The body diode's low forward drop combined with sub-mOhm RDS(on) minimizes dissipation versus a Schottky diode, cutting heat sink cost. The 30V VDS is sufficient for 12V OR-ing buses; for -48V designs use the 100V IPP075N15N3GXKSA1 or BSC014NE2LSIATMA1 instead. Driver circuits must add reverse-current detection with fast turn-off (under 10 us) to satisfy GR-3152 hot-bus requirements.
Recommended
Hot-Swap / Inrush Current Limiter
BSC011N03LSTATMA1 serves as the pass-FET in 12V hot-swap controllers such as the BTS441RGATMA1 or LT4256, where the part must withstand inrush surge currents up to 100A pulsed while burning initial SOA during capacitor charging. Its 115W PD at TC=25C and UIS avalanche rating make it robust against start-up faults. The exposed drain pad must be soldered to at least 6 cm2 of copper to maintain the rated SOA. For -48V telecom hot-swap use a 100V part instead.
Recommended
Low-Voltage Motor Drive H-Bridge
BSC011N03LSTATMA1 works well as the low-side switch in a 12V brushless DC (BLDC) or brushed DC motor driver H-bridge for small pumps, fans, and e-bike controllers. The 100A continuous rating exceeds the peak current capability of most sub-1kW motors. Switching at 25-50 kHz PWM gives quiet operation; the 72 nC Qg is well-matched to gate drivers like the IRS21867STRPBF or 2ED21064S06JXUMA1. For higher-voltage 48V BLDC drives use the 100V IAUC120N06S5L015ATMA1 instead.
Recommended
Power Path Switch in SSDs / Storage
BSC011N03LSTATMA1 enables the load-switch FET between the 12V input rail and the internal 5V/3.3V buck converters in enterprise SSDs and NVMe storage cards, providing inrush limiting and short-circuit protection. Its sub-mOhm RDS(on) at 10V VGS keeps voltage drop under 100 mV even at 30A continuous, preserving power-supply margin for the NAND subsystem. Designers should also add reverse-current blocking to support hot-plug events. For very-low-voltage direct-from-3.3V designs consider a smaller 20V part to optimize efficiency.
Recommended
Recommended Products Summary
Engineering reference data for BSC011N03LSTATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC019N04LSGATMA1 | BSC050N04LSGATMA1 | BSC12DN20NS3GATMA1 | IPC50N04S5L5R5ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 30 V | 40 V | 40 V | 200 V | 40 V | 40 V |
| RDS(on) max at VGS=10V | 1.1 mOhm | 1.9 mOhm | 5 mOhm | 12 mOhm | 5.5 mOhm | 1.3 mOhm |
| Continuous Drain Current at TC=25C | 100 A | 100 A | 80 A | 33 A | 50 A | 100 A |
| Technology Family | OptiMOS | OptiMOS | OptiMOS | CoolMOS | OptiMOS-5 | OptiMOS-7 |
| Lifecycle Status | NRND | Active | Active | Active | Active | Active |
Key Differentiators
- Sub-mOhm RDS(on) in TDSON-8 FL footprint (vs BSC050N04LSGATMA1)
- Lowest voltage drop in the OptiMOS 30V family (vs BSC019N04LSGATMA1)
- Compact TDSON-8 FL package with low thermal resistance (vs IPC50N04S5L5R5ATMA1)
- 100% UIS avalanche rated (vs Generic competitor parts)
Design Notes
Estimated: at PD = 7W continuous (VIN=12V, VOUT=5V, IOUT=2A buck application), junction temperature rise is roughly 7W x 30C/W (junction-to-ambient on 6 cm2 copper) = 210C, which exceeds the 150C max. The exposed pad MUST be soldered to at least 6 cm2 of 2 oz copper on the top and bottom layers to stay within the SOA. For continuous dissipation above 3W, add an external heat sink or migrate to a D2PAK part with lower RthJA.
Gate-drive loop inductance between the gate-driver output and the gate-source pins must be minimized. Place the gate driver within 1 cm of the gate pin and keep the gate-source return trace on the same layer to avoid miller-plateau ringing at high dV/dt. Use a 10-100 Ohm gate-source resistor to damp LC resonances. The exposed drain pad should be connected to the system ground plane with at least 8 thermal vias to keep junction temperature within margins.
Do not exceed VGS=+/-20V, even briefly during switching transients; clamp the gate with a 15V Zener or TVS to protect the gate oxide from gate-driver overshoot. The body diode is rated for average forward current only - do not use it as a free-wheeling diode at switching frequencies above 100 kHz without confirming reverse-recovery behavior. Always operate within the SOA curve provided in the datasheet during inrush events such as capacitor charging or motor stall conditions.
The PG-TDSON-8 FL package has a drain-connected exposed pad. The PCB land pattern must include a thermal pad with at least 8 thermal vias (0.3 mm drill, 1 mm pitch) to the inner ground/power plane to meet the RthJC of roughly 1C/W. The pad-to-source clearance must follow IPC-7351 nominal land pattern; reducing it degrades the drain creepage and risks high-voltage failure. For high-current (>30A) operation, parallel multiple vias and stitch the source pins together on the top layer.
Compliance Information
RoHS and REACH compliant per Infineon product page; not AEC-Q100 qualified - for automotive applications use the IAUC-prefixed Infineon automotive-grade alternatives.
