IPD038N06N3GATMA1 vs IPB110P06LMATMA1 Comparison
Detailed side-by-side comparison of IPD038N06N3GATMA1 by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon
IPD038N06N3GATMA1 β Active
Specification Comparison
| Parameter | IPD038N06N3GATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $1.31 |
| FET Type | N-Channel MOSFET | P-Channel |
| Series | OptiMOS 60V | β |
| Drain-Source Voltage (VDS) | 60 V | -60 V |
| Continuous Drain Current (ID) at Tc | 90 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ) | β |
| On-Resistance (RDS(on)) at VGS=10V | 3.8 mΞ© | β |
| Total Power Dissipation (PD) at Tc | 188 W | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 C to +175 C (TJ) |
| Package | PG-TO252-3 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Lead-Free | Yes | Yes |
| Technology | OptiMOS trench MOSFET | OptiMOS (trench MOSFET) |
| Polarity | N-Channel | β |
| Continuous Drain Current (ID) at TC=25C | β | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | β | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | β | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | β | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | β | +/-20 V |
| Package / Case | β | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | β | PG-TO263-3-2 |
| Gate Drive Level | β | Logic-level compatible |