IPD038N06N3GATMA1 vs IPB110P06LMATMA1 比較
詳細並排比較 IPD038N06N3GATMA1 由 Infineon 與 IPB110P06LMATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD038N06N3GATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET | P-Channel |
| Series | OptiMOS 60V | — |
| Drain-Source Voltage (VDS) | 60 V | -60 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ) | — |
| On-Resistance (RDS(on)) at VGS=10V | 3.8 mΩ | — |
| Total Power Dissipation (PD) at Tc | 188 W | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55 C to +175 C (TJ) |
| 封裝 | PG-TO252-3 (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes | — |
| Lead-Free | Yes | Yes |
| Technology | OptiMOS trench MOSFET | OptiMOS (trench MOSFET) |
| Polarity | N-Channel | — |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| 封裝 / 外殼 | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |