IPD038N06N3GATMA1 vs IPB110P06LMATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD038N06N3GATMA1 sa pamamagitan ng Infineon at IPB110P06LMATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon
IPD038N06N3GATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD038N06N3GATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | P-Channel |
| Series | OptiMOS 60V | — |
| Drain-Source Voltage (VDS) | 60 V | -60 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ) | — |
| On-Resistance (RDS(on)) at VGS=10V | 3.8 mΩ | — |
| Total Power Dissipation (PD) at Tc | 188 W | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -55 C to +175 C (TJ) |
| Packhaging | PG-TO252-3 (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Lead-Free | Yes | Yes |
| Technology | OptiMOS trench MOSFET | OptiMOS (trench MOSFET) |
| Polarity | N-Channel | — |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Packhaging / Kaso | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |