IPD038N06N3GATMA1 vs IPB110P06LMATMA1 Perbandingan
Perbandingan bersamaan detil IPD038N06N3GATMA1 dari Infineon dan IPB110P06LMATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD038N06N3GATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | P-Channel |
| Series | OptiMOS 60V | — |
| Drain-Source Voltage (VDS) | 60 V | -60 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ) | — |
| On-Resistance (RDS(on)) at VGS=10V | 3.8 mΩ | — |
| Total Power Dissipation (PD) at Tc | 188 W | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55 C to +175 C (TJ) |
| Paket | PG-TO252-3 (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Bebas Halogen | Yes | — |
| Lead-Free | Yes | Yes |
| Technology | OptiMOS trench MOSFET | OptiMOS (trench MOSFET) |
| Polarity | N-Channel | — |
| Continuous Drain Current (ID) at TC=25C | — | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | — | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | — | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | — | +/-20 V |
| Paket / Case | — | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | — | PG-TO263-3-2 |
| Gate Drive Level | — | Logic-level compatible |