IPD042P03L3GATMA1 vs IRFR5410TRPBF Comparison
Detailed side-by-side comparison of IPD042P03L3GATMA1 by Infineon and IRFR5410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD042P03L3GATMA1 | IRFR5410TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | -100 V |
| Continuous Drain Current (ID, Tc=25°C) | -70 A | — |
| Pulsed Drain Current (IDM) | -280 A | — |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | — |
| RDS(on) max @ VGS = -4.5 V | [DATA_NEEDED: RDS(on) @ -4.5 V] | — |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W | — |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ | — |
| Operating Temperature Range | -55°C to +175°C (TJ) | -55 °C to +150 °C (TJ) |
| Package | PG-TO252-3 (DPAK) | TO-252AA (DPAK), surface mount |
| Technology | OptiMOS™ P (Trench) | HEXFET (advanced process, Gen 5) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | — |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID) at TC = 25 °C | — | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | — | 205 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) typ | — | 70 nC |
| Power Dissition (PD) at TC = 25 °C | — | 66 W |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |
| RDS(on) Test Conditions | — | VGS = -10 V, ID = -7.0 A |