IPD30N10S3L34ATMA1 vs IPD35N10S3L26ATMA2 Perbandingan

Perbandingan bersamaan detil IPD30N10S3L34ATMA1 dari Infineon dan IPD35N10S3L26ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD30N10S3L34ATMA1 IPD35N10S3L26ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS-T
Tipe Transistor N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc=25°C) 30 A —
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc=25°C) 57 W —
Drain-Source On-Resistance (RDS(on) max) 31 mΩ @ VGS=10 V —
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) —
Total Gate Charge (Qg typ) 23 nC —
Suhu Hubung Kerja -55°C to +175°C —
Paket PG-TO252-3-11 (DPAK-2 / SC-63) PG-TO252-3-11 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
Level MSL 1 (JEDEC J-STD-020, 260°C peak reflow) [DATA_NEEDED: MSL rating]
RoHS / REACH Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated 100% Avalanche tested —
Continuous Drain Current (ID, Tc) — 35 A
On-Resistance R<sub>DS(on)</sub> max — 24 mOhm
Power Dissipation (Ptot, Tc) — 71 W
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: gate threshold typical/range]
Rentang Suhu Kerja — [DATA_NEEDED: Tj min/max]
Jumlah Pin — 3 (Drain, Source, Gate + tab)
Technology — Trench MOSFET (OptiMOS-T)
Status RoHS — Compliant
Lead-Free — Yes

Spek dan Sumber

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