IPD30N10S3L34ATMA1 vs IPD35N10S3L26ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N10S3L34ATMA1 disebabkan oleh Infineon dan IPD35N10S3L26ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD30N10S3L34ATMA1 IPD35N10S3L26ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS-T
Jenis Transistor N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc=25°C) 30 A —
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc=25°C) 57 W —
Drain-Source On-Resistance (RDS(on) max) 31 mΩ @ VGS=10 V —
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) —
Total Gate Charge (Qg typ) 23 nC —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan PG-TO252-3-11 (DPAK-2 / SC-63) PG-TO252-3-11 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
Aras MSL 1 (JEDEC J-STD-020, 260°C peak reflow) [DATA_NEEDED: MSL rating]
RoHS / REACH Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated 100% Avalanche tested —
Continuous Drain Current (ID, Tc) — 35 A
On-Resistance R<sub>DS(on)</sub> max — 24 mOhm
Power Dissipation (Ptot, Tc) — 71 W
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: gate threshold typical/range]
Gambaran Suhu Operasi — [DATA_NEEDED: Tj min/max]
Kiraan Pin — 3 (Drain, Source, Gate + tab)
Technology — Trench MOSFET (OptiMOS-T)
Status RoHS — Compliant
Lead-Free — Yes

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