IPD50N10S3L16ATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPD50N10S3L16ATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD50N10S3L16ATMA1 IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon

IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon

IPD50N10S3L16ATMA1 βœ“ Active

Specification Comparison

Parameter IPD50N10S3L16ATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.49
Manufacturer Infineon Technologies β€”
Part Number IPD50N10S3L16ATMA1 β€”
Series OptiMOS-T β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (V_DS) 100 V β€”
Continuous Drain Current (I_D, T_C=25C) 50 A β€”
Pulsed Drain Current (I_DM) 200 A β€”
R_DS(on) max @ V_GS=10V 15 mΞ© β€”
Gate Threshold Voltage (V_GS(th)) 2.5 V (typ) β€”
Power Dissipation (P_D, T_C=25C) 100 W β€”
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C β€”
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Status Compliant Compliant
Packaging Tape & Reel β€”
Technology β€” N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Pin Count β€” 3 (2 + Tab)
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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