IPD50P04P4L11ATMA2 vs IPB120P04P4L03ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50P04P4L11ATMA2 disebabkan oleh Infineon dan IPB120P04P4L03ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD50P04P4L11ATMA2 IPB120P04P4L03ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor P-Channel MOSFET, enhancement mode —
Drain-Source Voltage VDS -40 V —
Continuous Drain Current ID (TC = 25 °C) -50 A —
On-State Resistance RDS(on) (VGS = -10 V) 10.6 mΩ typical —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) -1.0 V to -2.5 V typical —
Typical Gate Charge Qg 45 nC —
Power Dissipation PD (TC = 25 °C) 58 W —
Suhu Hubungan Operasi -55 °C to +175 °C -55C to +175C
Kemasan PG-TO252-3-313 (DPAK), surface mount PG-TO263-3-2 (D2PAK)
Kiraan Pin 3 (Drain / Tab / Source / Gate) 3 (Gate, Drain, Source)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Transistor Polarity — P-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET
Status RoHS — Compliant (per Infineon product page)

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