IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
MPN: IPB120P04P4L03ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.92 | $3.92 |
| 10 | $3.18 | $31.80 |
| 100 | $2.47 | $247.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.74 | $1,740.00 |
Drop-in alternatives for IPB120P04P4L03ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB120P04P4L03ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB180P04P4L02ATMA2
✅ Drop-In✓ In Stock
$1.85 / Unit
View Datasheet →IPD50P04P413ATMA2
✅ Drop-In✓ In Stock
$0.42 / Unit
View Datasheet →IPD50P04P4L11ATMA2
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IRF4905SPBF
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →IRFR4905TRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IPB120P04P4L03ATMA2 Maximum Ratings & Electrical Characteristics
| Transistor Polarity | P-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 120 A |
| Power Dissipation (PD, Tc=25C) | 136 W |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) |
| Operating Junction Temperature | -55C to +175C |
| Package | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount |
| Technology Family | OptiMOS-P2 |
| Configuration | Single P-Channel MOSFET |
| Pin Count | 3 (Gate, Drain, Source) |
| RoHS Status | Compliant (per Infineon product page) |
IPB120P04P4L03ATMA2 Pin Configuration
| Pin 1 | Gate — Gate control input; pull ~10 V below source to fully enhance the P-channel |
| Pin 2 | Drain — Drain terminal (also bonded to metal tab); connected to load side |
| Pin 3 | Source — Source terminal; connected to battery positive in high-side P-channel configuration |
Safe Operating Area (DC, Tj=175C)
Typical Applications
IPB120P04P4L03ATMA2 is suitable for 6 applications: 12V Automotive High-Side Motor Bridge, Electronic Fuse (e-Fuse) and Hot-Swap Protection, Reverse-Battery Protection Block, Industrial 24V DC Load Switch, Battery Management Isolation FET, High-Current DC-DC Converter High-Side Switch.
12V Automotive High-Side Motor Bridge
The IPB120P04P4L03ATMA2 fits 12 V automotive high-side motor bridges because its 40 V V(BR)DSS provides ample headroom above the 12 V nominal bus while tolerating load-dump transients up to ~35 V. The P-channel polarity eliminates the need for a bootstrap supply or charge pump that an N-channel high-side switch would require, simplifying gate drive to a single low-side gate driver. The 120 A continuous ID rating comfortably handles motor inrush for window lift, seat control, HVAC blowers, and door-lock actuators. The 3.1 mΩ RDS(on) keeps conduction loss at ~37 W at 110 A RMS, which the D2PAK tab can dissipate with a properly designed copper pour.
Recommended
Electronic Fuse (e-Fuse) and Hot-Swap Protection
The IPB120P04P4L03ATMA2's 40 V rating and 120 A ID make it ideal for solid-state e-fuse circuits that protect downstream electronics from over-current and short-circuit events on 12 V/24 V distribution buses. The P-channel placement on the high side allows the load to be disconnected by simply pulling the gate to the source potential, which is easily done by a small microcontroller GPIO plus gate resistor. The 3.1 mΩ RDS(on) keeps the voltage drop across the e-fuse low during normal operation, reducing steady-state power dissipation. OptiMOS-P2's optimized body diode supports switching transients without latch-up.
Recommended
Reverse-Battery Protection Block
In reverse-battery protection circuits for 12 V/24 V automotive ECUs, the IPB120P04P4L03ATMA2 placed in series with the positive rail blocks reverse current when the battery is connected with reversed polarity. Because it is a P-channel MOSFET, the source connects to the battery positive and the drain to the load; under normal operation the gate is held at source potential (off), and a small N-channel or resistor network pulls the gate low (on). The 40 V V(BR)DSS and 120 A ID comfortably exceed the maximum forward load current and load-dump transient of typical automotive ECUs. The D2PAK package handles continuous current with appropriate PCB copper.
Recommended
Industrial 24V DC Load Switch
For 24 V industrial automation systems, the IPB120P04P4L03ATMA2 serves as a robust high-side load switch for solenoids, relay coils, and motor loads in PLCs and factory controllers. Its 40 V V(BR)DSS provides comfortable margin above the 24 V nominal plus transients, while the 120 A continuous ID accommodates high inrush from large solenoids. The P-channel configuration eliminates the level-shift complexity of an N-channel high-side switch. The D2PAK footprint is an industry-standard outline that simplifies PCB layout and heatsinking design across product variants.
Recommended
Battery Management Isolation FET
In battery management systems (BMS) for 12 V/24 V battery packs, the IPB120P04P4L03ATMA2 acts as an isolation or protection FET in series with the battery rail to disconnect the pack during fault conditions (over-current, short circuit, overtemperature). The 120 A continuous ID handles pack-level discharge currents typical of automotive and e-mobility battery packs, and the 3.1 mΩ RDS(on) minimizes voltage drop and self-heating during normal operation. The P-channel polarity allows the gate to be controlled by ground-referenced circuitry on the BMS AFE, simplifying isolation drive. The D2PAK package's thermal mass handles pulse currents during motor starts.
Recommended
High-Current DC-DC Converter High-Side Switch
The IPB120P04P4L03ATMA2 is well-suited as the high-side switch in 12 V to lower-voltage buck converters where the input voltage is below the gate-drive headroom limit of a P-channel device (i.e., output voltages above ~6 V with VGS max rating). Its low 3.1 mΩ RDS(on) reduces switching and conduction losses, and the 120 A ID supports multi-hundred-watt converter designs. The P-channel polarity removes the need for a bootstrap circuit normally required for N-channel high-side switches, reducing BOM count and complexity. OptiMOS-P2 technology provides fast switching with controlled dv/dt for low EMI.
Recommended
Recommended Products Summary
Engineering reference data for IPB120P04P4L03ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB120P04P4L03ATMA1 | IPB180P04P4L02ATMA2 | IPD50P04P413ATMA2 | IPD50P04P4L11ATMA2 | IRF4905SPBF | IRFR4905TRPBF |
|---|---|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) | PG-TO252-3 (DPAK) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| V(BR)DSS | 40 V | 40 V | 40 V | 40 V | 40 V | 55 V | 55 V |
| Continuous ID (Tc=25C) | 120 A | 120 A | 180 A | 50 A | 50 A | 74 A | 74 A |
| RDS(on) typ @ VGS=10V | 3.1 mΩ | 3.1 mΩ | 2 mΩ | 4.1 mΩ | [DATA_NEEDED] | 20 mΩ | 20 mΩ |
| Power Dissipation (Tc=25C) | 136 W | 136 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 200 W | [DATA_NEEDED] |
| Technology | OptiMOS-P2 | OptiMOS-P2 | OptiMOS-P2 | OptiMOS-P2 | OptiMOS-P2 | HEXFET | HEXFET |
| Unit Price (qty 1, USD) | 3.92 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Highest continuous ID in same-brand 40V P-channel D2PAK line (vs IPD50P04P413ATMA2)
- OptiMOS-P2 technology with optimized body diode (vs IRF4905SPBF)
- Higher current ceiling within same D2PAK footprint (vs IPB180P04P4L02ATMA2)
Design Notes
The IPB120P04P4L03ATMA2 dissipates up to 136 W at Tc=25 °C, but in real PCB designs without active cooling the practical dissipation is limited by the D2PAK tab thermal resistance to the board. Estimate: at 100 A continuous through 3.1 mΩ RDS(on), conduction loss is I² × R = 100² × 0.0031 ≈ 31 W. With a typical 1 oz copper pour of 1 square inch on the drain tab, expect theta_JA around 40-50 °C/W, yielding a ~50 °C temperature rise at 31 W — adequate for many applications but designers should verify against the SOA curve for transient load events such as motor inrush. (Estimated: I=100A, R=3.1mΩ, theta_JA=40C/W.)
PCB layout for the D2PAK package must include a continuous copper pour on the drain tab with thermal vias to internal ground/power planes. Place 10-15 thermal vias (0.3 mm drill, 1 mm pitch) directly under the tab to conduct heat into inner copper layers. Source and gate traces should be sized for the peak gate-drive current (~1 A transient) and kept short to minimize parasitic inductance, which can cause gate ringing and dv/dt-induced turn-on in motor applications.
Do not assume the D2PAK tab is isolated — it is internally bonded to the drain (pin 2). For high-side P-channel switching where the tab is at battery voltage, ensure the PCB copper under the tab does not short to other circuitry. Also, gate-source voltage must never exceed ±20 V; add a 10-15 V Zener between gate and source for protection against avalanche transients from motor back-EMF or load-dump events.
Minimize the gate-drive loop area by placing the gate driver IC as close as possible to the MOSFET gate pin. For high-side P-channel configurations, use a kelvin-source connection (separate source sense trace back to the gate driver ground reference) to avoid source-inductance-induced gate-drive degradation. Add a 10 Ω gate resistor to dampen ringing and limit peak gate current during switching transitions.
Compliance Information
RoHS compliant per Infineon product page. AEC-Q100 automotive qualification status not explicitly stated in the retrieved data; verify with Infineon sales for automotive-grade applications.
