IPD50R380CEAUMA1 vs IPD60R210PFD7SAUMA1 比較

詳細並排比較 IPD50R380CEAUMA1 由 Infineon 與 IPD60R210PFD7SAUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD60R210PFD7SAUMA1 IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 ✓ 啟用中

規格比較

參數 IPD50R380CEAUMA1 IPD60R210PFD7SAUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Drain-Source Voltage (V(BR)DSS) 500 V —
Continuous Drain Current (Id) at Tc=25C 14.1 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm] —
On-State Resistance (RDS(on)) max at VGS=10V 380 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Total Power Dissipation (Ptot) at Tc=25C 98 W —
工作接面溫度 -55C to +150C —
Technology CoolMOS CE (super-junction) Superjunction (CoolMOS) N-Channel Power MOSFET
Channel Type N-Channel —
封裝 PG-TO252-3 (DPAK) —
安裝類型 Surface Mount Surface Mount (SMT)
RoHS 狀態 Compliant —
AEC-Q101 Automotive Not qualified (CE variant; use CE-A for automotive) —
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level] —
Manufacturer — Infineon Technologies
Product Family — CoolMOS PFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc) — 16 A
On-Resistance (RDS(on), max) — 210 mOhm
Power Dissipation (Ptot, Tc=25C) — 64 W
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Package Type — TO-252 (DPAK)
Manufacturer Package Designator — PG-TO252-3-344
Pin Configuration — 3-Pin (2+Tab) - Gate, Drain (tab), Source
工作溫度範圍 — -55C to +150C (TJ)
Lead-Free / RoHS — Yes (compliant)
Application Segment — Consumer-grade SMPS

資料表與資源

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