IPD5N25S3430ATMA1 vs IPD60R180P7ATMA1 Comparison
Detailed side-by-side comparison of IPD5N25S3430ATMA1 by Infineon and IPD60R180P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD5N25S3430ATMA1 | IPD60R180P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Technology | OptiMOS (planar-trench) | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 5 A | — |
| Pulsed Drain Current (IDM) | 20 A | — |
| RDS(on) max @ VGS=10V | 430 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V typ / 4 V max | — |
| Input Capacitance (Ciss) | 422 pF typical | — |
| Power Dissipation (PD, Tc=25°C) | 41 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | -55C to +150C |
| Package | PG-TO252-3-313 (DPAK, surface mount) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Status | ROHS3 Compliant | Compliant |
| Lead Finish | Matte Tin (lead-free) | — |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Configuration | Single, 3-pin (2+Tab) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P7 |
| Continuous Drain Current (ID) at TC=25C | — | 18 A |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Power Dissipation (PD) at TC=25C | — | 72 W |
| Lead-Free | — | Yes |
| Shipping Package | — | Tape and Reel (ATMA1 suffix) |