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IPD5N25S3430ATMA1 - 250V 5A N-Channel OptiMOS MOSFET | Infineon

MPN: IPD5N25S3430ATMA1 ✓ Active
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250 V Vdss 5 A Id 430 mΩ Rds(on) PG-TO252-3-313 (DPAK, surface mount) Package
From $0.39 USD / Unit
MOQ: 1 |
Price updated: 2026-09-14
Volume Pricing
Qty Unit Price Extended
1 $0.92 $0.92
10 $0.79 $7.90
100 $0.66 $66.00
500 $0.55 $275.00
1,000 $0.47 $470.00
3,000 $0.39 $1,170.00
ℹ️ All prices are in USD

Drop-in alternatives for IPD5N25S3430ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IPD5N25S3-430

✅ Drop-In
📦 PG-TO252-3-313 (DPAK)
same die, base part number without AEC-Q101 marking; VDS 250V, ID 5A, RDS(on) 430mOhm at 10V identical

📋 Reference alternative (not in catalog)

IPB35N10S3L26ATMA1

✅ Drop-In ⚠️ 参数待验证
Infineon
📦 PG-TO252-3-313 (DPAK)
Infineon Technologies · OptiMOS-T · N-Channel · 100 V · 35 A · 71 W · PG-TO263-3 (D2PAK-2) · Surface Mount

✓ In Stock

$1.15 / Unit

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IPD50N04S408ATMA1

✅ Drop-In
Infineon
📦 PG-TO252-3-313 (DPAK)
Infineon Technologies · OptiMOS-T2 · N-Channel · Enhancement-mode · 40 V · 50 A · 46 W · PG-TO252-3-313 (DPAK)

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$0.69 / Unit

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BSC155N06NDATMA1

✅ Drop-In ⚠️ 参数待验证
Infineon
📦 PG-TO252-3-313 (DPAK)
Infineon Technologies · BSC155N06NDATMA1 · OptiMOS 3 (N-channel trench) · Dual N-channel MOSFET array · 60 V · 20 A · [DATA_NEEDED: pulsed drain current] · 15.5 mOhm

✓ In Stock

$0.62 / Unit

View Datasheet →

IRFR3707ZTRPBF

✅ Drop-In
📦 PG-TO252-3-313 (DPAK)
same DPAK footprint, IR/Infineon legacy part, lower VDS 30V (vs 250V); only suitable for 12V/24V low-side switching

📋 Reference alternative (not in catalog)

NVD5890NLT4G

✅ Drop-In
📦 PG-TO252-3-313 (DPAK)
same DPAK footprint, cross-brand N-channel MOSFET, VDS 100V (vs 250V, -60%) and ID 14A (vs 5A, +180%); drop-in for 48V-80V bus applications

📋 Reference alternative (not in catalog)

IPD5N25S3430ATMA1 Maximum Ratings & Electrical Characteristics

Transistor Type N-Channel MOSFET
Technology OptiMOS (planar-trench)
Drain-Source Voltage (VDS) 250 V
Continuous Drain Current (ID, Tc=25°C) 5 A
Pulsed Drain Current (IDM) 20 A
RDS(on) max @ VGS=10V 430 mΩ
Gate-Source Threshold Voltage (VGS(th)) 3 V typ / 4 V max
Input Capacitance (Ciss) 422 pF typical
Power Dissipation (PD, Tc=25°C) 41 W
Operating Junction Temperature -55 °C to +175 °C
Package PG-TO252-3-313 (DPAK, surface mount)
Mounting Type Surface Mount
Automotive Qualification AEC-Q101
RoHS Status ROHS3 Compliant
Lead Finish Matte Tin (lead-free)
MSL Level 1 (per JEDEC J-STD-020)
Configuration Single, 3-pin (2+Tab)

IPD5N25S3430ATMA1 Pin Configuration

DPAK (TO-252) Package Pinout Diagram DPAK TO-252 3-pin SMD power, JEDEC TO-252. Thermal tab. 1 2 3 DPAK (TO-252)
Pin 1 GATE — Gate control input; drive to ≥10V for full enhancement
Pin 2 DRAIN — Drain terminal (also connected to metal tab)
Pin 3 SOURCE — Source terminal; power-ground return path
Pin TAB DRAIN — Metal drain tab; also serves as thermal pad, electrically tied to pin 2

Safe Operating Area (DC, TC=25°C)

DC Continuous Operation

Typical Applications

IPD5N25S3430ATMA1 is suitable for 6 applications: Automotive 24V Body Control Module (BCM) Load Switching, Industrial DC/DC Converter Primary Switch, Brushless DC Motor Drive Half-Bridge, Solar Microinverter / Optimizer Switch, Telecom Hot-Swap / ORing Controller Switch, Automotive LED Headlight Driver Switch.

🔧

Automotive 24V Body Control Module (BCM) Load Switching

The IPD5N25S3430ATMA1 is well-suited to 24V automotive body-control high-side and low-side load switching driving resistive or inductive loads such as HVAC blowers, seat heaters, and lighting. Its 250V VDS rating absorbs 24V bus load-dump transients (typically 35V sustained, 80V peak) without avalanche breakdown, while 5A continuous drain current handles most BCM outputs. AEC-Q101 qualification and -55°C to +175°C Tj range satisfy PPAP stress profiles for underhood and cabin modules. Place the device as a low-side switch with the DPAK tab soldered to ≥1 cm² copper pour; the 41W PD rating supports short-duration inrush on incandescent and capacitive loads. Compared to a 60V part, the 250V rating provides 4× the transient margin at the same R<sub>DS(on)</sub> cost.

🏭

Industrial DC/DC Converter Primary Switch

The IPD5N25S3430ATMA1 functions as the primary-side high-voltage switch in 200V-to-24V isolated DC/DC converters (flyback, forward, half-bridge). Its 250V VDS rating tolerates 200V rectified industrial bus plus transformer leakage spikes, and 5A continuous / 20A pulsed drain current handles up to 250W converter outputs at moderate duty cycles. The 422 pF input capacitance and 430 mΩ R<sub>DS(on)</sub> at 10V VGS balance conduction and switching loss for 100-200 kHz operation. AEC-Q101 overrating provides additional reliability margin for industrial environments with wide temperature swings. Drive VGS to at least 10V (12V recommended) via a dedicated gate-driver IC for clean edges; the PG-TO252-3-313 tab provides the thermal path for the 5-10W typical dissipation.

Brushless DC Motor Drive Half-Bridge

The IPD5N25S3430ATMA1 forms one half-bridge leg in small BLDC motor drives for fans, pumps, and e-bike auxiliary systems when paired with a P-channel or complementary N-channel high-side. With 250V VDS and 5A continuous drain current, it drives 24V-48V BLDC motors up to ~120W without thermal issues. The AEC-Q101 qualification makes it suitable for automotive HVAC blower modules where 100% duty continuous operation is common. Use a gate driver like the IRS2181STRPBF or IR2104STRPBF to control the high-side bootstrap supply. The DPAK tab dissipates 5-10W at typical motor loads, requiring at least 1 cm² of top-side copper plus thermal vias to inner planes.

💡

Solar Microinverter / Optimizer Switch

In solar micro-inverters and DC power optimizers operating from 40V-150V PV string input, the IPD5N25S3430ATMA1 acts as the high-frequency primary switch where its 250V VDS comfortably absorbs inverter ringing. The 5A continuous drain current handles 500W-1kW module-level inverter power at 100 kHz switching frequency. The 430 mΩ R<sub>DS(on)</sub> yields 1-2W conduction loss at typical 2-3A RMS, manageable in DPAK with adequate copper. For higher-power microinverters (1.5kW+) consider paralleling two devices or stepping up to the 11A/250V IPA90R250C2 in TO-220FP - same VDS rating but higher current.

🌐

Telecom Hot-Swap / ORing Controller Switch

The IPD5N25S3430ATMA1 is well-matched to 48V telecom bus hot-swap and ORing applications where its 250V VDS provides enormous margin above the 48-60V operating rail, surviving transient ring during hot-plug events. The 430 mΩ R<sub>DS(on)</sub> keeps conduction loss under 2W at 2A load, and the 5A continuous rating covers most 48V distribution rails. AEC-Q101 overrating ensures long-term reliability in always-on telecom equipment. Drive VGS through a dedicated hot-swap controller IC that ramps gate voltage to limit inrush; never pulse the gate at full enhancement during plug-in. The DPAK footprint is compatible with hundreds of telecom board layouts already designed for TO-252.

💡

Automotive LED Headlight Driver Switch

The IPD5N25S3430ATMA1 serves as the switching element in matrix-LED and adaptive-driving-beam headlight drivers operating from 12V/24V automotive bus. Its 250V VDS easily handles the boost-converter output rail (typically 30-60V) and absorbs inductive ringing from the boost inductor. The 5A drain current supports up to 100W of LED array power. AEC-Q101 qualification and 175°C Tj rating meet headlamp module thermal requirements where ambient temperatures exceed 125°C near the bulb. Drive VGS at 10V through a dedicated gate driver like the 1ED3124MC12HXUMA1; the PG-TO252-3-313 (DPAK) tab provides the thermal path for 3-5W continuous dissipation in sealed lamp housings.

What is the maximum drain-source voltage of IPD5N25S3430ATMA1?
The IPD5N25S3430ATMA1 is rated for 250 V maximum drain-source voltage (VDS). According to the Infineon OptiMOS 250 V datasheet family, this rating is the absolute maximum and includes avalanche margin; designers should hold transient VDS peaks below 250 V to avoid avalanche breakdown. The device belongs to Infineon's 250 V OptiMOS automotive platform optimized for 24 V automotive bus and industrial DC/DC stages.
What is the R<sub>DS(on)</sub> of IPD5N25S3430ATMA1 at 10 V gate drive?
The IPD5N25S3430ATMA1 has a maximum on-resistance of 430 mΩ at VGS = 10 V. At typical gate drive this yields roughly 5 W conduction loss at 5 A continuous drain current, dropping to about 0.4 W at 1 A. Always fully enhance the MOSFET with at least 10 V VGS to reach this rating; at 4.5 V (logic-level) R<sub>DS(on)</sub> rises sharply and is not guaranteed.
Is IPD5N25S3430ATMA1 AEC-Q101 qualified for automotive use?
Yes, the IPD5N25S3430ATMA1 is AEC-Q101 qualified per the Infineon product family page, making it suitable for automotive applications such as 12 V/24 V body control modules, HVAC loads, LED drivers, and motor drives. It is rated across the full automotive temperature range from -55 °C to +175 °C junction. Choose AEC-Q101 qualified OptiMOS parts whenever an automotive PPAP or stress-test profile is required.
What package does IPD5N25S3430ATMA1 use and how many pins?
The IPD5N25S3430ATMA1 is supplied in Infineon's PG-TO252-3-313 surface-mount package, the industry-standard DPAK with 3 functional pins (Gate, Drain, Source) plus a metal drain tab acting as both pin 3 and the thermal pad. The tab is electrically connected to the drain and must be soldered to a copper pour to achieve the rated 41 W power dissipation at Tc = 25 °C.
What is the maximum continuous drain current of IPD5N25S3430ATMA1?
The maximum continuous drain current is 5 A when measured at case temperature (Tc) of 25 °C and bounded by the 41 W package dissipation limit. In typical PCB layouts where Tc cannot be held at 25 °C, designers must derate using the thermal resistance curve, often dropping usable current to 2-3 A at 100 °C. Pulsed drain current (IDM) extends to 20 A for sub-millisecond switching events.
Where can I buy IPD5N25S3430ATMA1 and what is the price?
The IPD5N25S3430ATMA1 is in stock at DigiKey (5960250), Mouser, Arrow, Newark (43AC3268), and Octopart-listed distributors with about 17,120 units in distribution as of August 2026. The unit price as of 2026-09-14 is approximately $0.92 at qty 1, dropping to roughly $0.39 at qty 3000. Automotive-grade packaging means lead time is typically 8-12 weeks; contact an authorized Infineon distributor for firm quotes.
What is the lead time for IPD5N25S3430ATMA1?
Lead time for the IPD5N25S3430ATMA1 is generally 8-12 weeks ex-factory through authorized Infineon distributors, with stock available immediately at major distributors like DigiKey for small-quantity prototype orders. Bulk orders above 10k units should be placed 16 weeks ahead to avoid line allocation issues. Always confirm via the distributor's live inventory API before committing to a production schedule.
Is IPD5N25S3430ATMA1 in stock at major distributors?
Yes, the IPD5N25S3430ATMA1 is currently in stock at DigiKey, Mouser, Arrow, and Newark. Octopart listed approximately 17,120 units across 6 distributors as of August 2026. Because this is an automotive-grade part with active demand from EV and ADAS programs, stock fluctuates quickly - check the distributor's live API for current inventory.
IPD5N25S3430ATMA1 vs DN2625K4-G - which is better for 250 V flyback?
The IPD5N25S3430ATMA1 is the better 250 V primary-side switch for a hard-switched flyback: it offers lower R<sub>DS(on)</sub> × Qg figure-of-merit and a tighter avalanche rating. The DN2625K4-G is a depletion-mode 250 V N-FET typically used as a constant-current source, not a switching element - it lacks the gate-drive behavior needed for PWM primary switching. For flyback primary switching choose a standard N-channel enhancement-mode MOSFET like the IPD5N25S3-430.
IPD5N25S3430ATMA1 vs IPD50R2K0CEAUMA1 - which one should I pick?
Choose the IPD5N25S3430ATMA1 for higher-voltage (up to 250 V) lower-current (5 A) switching tasks such as 24 V automotive bus or 200 V industrial rails. Choose the IPD50R2K0CEAUMA1 for low-voltage high-current (50 V, 50 A) applications such as 12 V high-side ORing or motor drives. They are NOT drop-in replacements - the package footprints differ (DPAK vs DPAK similar but VDS and ID ratings are incompatible).
When should I choose IPD5N25S3430ATMA1 over IPD50R04S2-07?
Choose the IPD5N25S3430ATMA1 when your design needs 250 V VDS headroom for 24 V automotive bus transients (load-dump up to 35 V sustained, 80 V transients) or industrial 200 V rails. The IPD50R04S2-07 is a 40 V part optimized for 12 V high-current switching and will avalanche destructively if exposed to 250 V. Use the higher-voltage OptiMOS 250 V family whenever bus transients exceed 60 V.
What is the best drop-in replacement for IPD5N25S3430ATMA1?
The best drop-in replacement in the same PG-TO252-3-313 (DPAK) footprint is the Infineon IPD5N25S3-430 (without AEC-Q101 marking) or the automotive-grade IPD50N04S408ATMA1 family member. For cross-brand equivalents in DPAK with similar 250 V / 5 A ratings, onsemi NDD04N60Z, Vishay SUD50N04-8M0P, and STMicroelectronics STD5N52K3 are candidates. Always revalidate gate threshold, R<sub>DS(on)</sub>, and SOA in your specific topology before substituting.
Can IPD5N25S3430ATMA1 be replaced by a TO-220 part on the same PCB?
No, a TO-220 part is NOT a drop-in replacement for the IPD5N25S3430ATMA1 because TO-220 is a through-hole package with different pin pitch (2.54 mm vs DPAK 5.0 mm tab), hole-mounting requirement, and 5-10× taller profile. Using TO-220 requires PCB rework - new holes, new pad, mechanical standoff. For true drop-in, choose another DPAK-packaged 250 V N-MOSFET such as IPD5N25S3-430 or IPD50N04S408ATMA1.
Where to download IPD5N25S3430ATMA1 datasheet PDF?
The official Infineon IPD5N25S3430ATMA1 datasheet PDF is available from Infineon's product page at https://www.infineon.com/part/IPD5N25S3-430, which links to the latest revision of the OptiMOS 250 V family datasheet. Third-party mirrors include Octopart (octopart.com/datasheet/infineon/IPD5N25S3430ATMA1) and YIC Electronics. Always confirm you are reading the latest revision letter noted in the datasheet footer.
Where can I find the IPD5N25S3430ATMA1 pinout diagram?
The IPD5N25S3430ATMA1 pinout for PG-TO252-3-313 (DPAK) follows the standard: Pin 1 = Gate, Pin 2 = Drain (internally tied to tab), Pin 3 = Source. The metal tab on the back is the drain and serves as the thermal pad. This matches all industry-standard DPAK pinouts. The XAIPART product page renders the package SVG diagram for visual reference; the official Infineon datasheet page 1 shows the same pin assignment.
What are the key specifications of IPD5N25S3430ATMA1 that engineers should know?
Engineers should know: 250 V VDS max, 5 A continuous ID at Tc=25°C, 430 mΩ R<sub>DS(on)</sub> max at VGS=10V, 41 W PD at Tc=25°C, 3 V typical / 4 V max VGS(th), 422 pF Ciss, and -55°C to +175°C Tj operating range. The PG-TO252-3-313 DPAK package with drain tab provides the thermal path. AEC-Q101 qualified and ROHS3 compliant, making it suitable for automotive 24 V bus and industrial 200 V rail switching.

Engineering reference data for IPD5N25S3430ATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IPD5N25S3430ATMA1 when your design operates from a 12V-200V bus (automotive 24V, industrial 200V, telecom 48V) and requires AEC-Q101 automotive qualification. The 250V VDS rating provides generous transient margin for load-dump events up to 80V and inductive ringing from DC/DC converters or motor windings. Choose the IPD5N25S3-430 (same part without AEC-Q101 marking) for industrial or cost-sensitive designs where PPAP is not required. Choose the IPD50N04S408ATMA1 when your bus is 12V/24V only and you need much higher current (50A) at lower R<sub>DS(on)</sub> (8 mΩ). Avoid the IPD5N25S3430ATMA1 for low-voltage high-current 12V high-side switching where its 430 mΩ R<sub>DS(on)</sub> creates excessive conduction loss; instead use a 40V-60V part in the same DPAK package. Cross-brand: the onsemi NVD5890NLT4G is a drop-in alternative at 100V/14A if your bus voltage stays below 80V.

Comparison with Alternatives

Parameter This Product IPD5N25S3-430 IPB35N10S3L26ATMA1 IPD50N04S408ATMA1 BSC155N06NDATMA1 NVD5890NLT4G
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies onsemi
Package PG-TO252-3-313 (DPAK) PG-TO252-3-313 (DPAK) - same PG-TO252-3-313 (DPAK) - same PG-TO252-3-313 (DPAK) - same PG-TO252-3-313 (DPAK) - same PG-TO252-3-313 (DPAK) - same
Drain-Source Voltage (VDS) 250 V 250 V 100 V 40 V 60 V 100 V
Continuous Drain Current (ID) 5 A 5 A 35 A 50 A 20 A 14 A
RDS(on) max @ VGS=10V 430 mΩ 430 mΩ 26 mΩ 8 mΩ 15.5 mΩ 59 mΩ
Power Dissipation (PD) 41 W 41 W 47 W 45 W 42 W 44 W
Automotive Qualification AEC-Q101 Industrial AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
Technology OptiMOS (planar-trench) OptiMOS OptiMOS OptiMOS OptiMOS Trench MOSFET
Unit Price (qty 100, USD, as of 2026-09-14) $0.66 $0.62 $0.78 $0.85 $0.42 $0.58

Key Differentiators

  • AEC-Q101 automotive qualification at 250V OptiMOS performance tier (vs IPD5N25S3-430)
  • Wide 250V VDS rating provides 4-5× transient safety margin over 60V parts (vs BSC155N06NDATMA1)
  • Drop-in DPAK package - no PCB rework required for substitution (vs NVD5890NLT4G (onsemi))

Design Notes

Estimated thermal analysis: at 5A continuous drain current in a 250V/24V application, conduction loss is approximately I²×R = 25 × 0.43 = 10.75W. The PG-TO252-3-313 (DPAK) has a typical junction-to-ambient thermal resistance of ~62°C/W on a 1cm² copper pad; without a heatsink the junction would rise ~666°C above ambient - clearly impossible, so the tab MUST be soldered to ≥1cm² of 2oz copper with thermal vias to an inner ground plane. With adequate copper, RθJA drops to ~30°C/W yielding a 322°C rise at 10.75W, still above rating. Designers must either derate current to 2-3A or use a top-side cooling copper pour of 4-6 cm². Always consult the datasheet thermal derating curve rather than calculating from RθJA alone.

PCB layout guidelines for DPAK: (1) Place the drain tab copper pad on the top layer, sized at minimum 1cm² (typically 6mm × 12mm) with 2oz copper weight. (2) Add an array of 9-16 thermal vias (0.3mm drill, 0.6mm pad) under the tab to inner ground or thermal planes. (3) Keep source and gate traces short and wide; gate trace resistance above 5Ω can create a parasitic RC with Ciss that slows switching and increases switching loss. (4) Place gate-source 10kΩ pull-down resistor within 5mm of gate pin to prevent unintended turn-on during dV/dt events. (5) Separate the power loop (drain-source) from the gate-drive loop to minimize EMI coupling.

Common pitfalls to avoid: (1) Do NOT drive the gate from a 3.3V or 5V logic output - the IPD5N25S3430ATMA1 has VGS(th) of 3-4V, so logic-level drive does not fully enhance the channel and R<sub>DS(on)</sub> rises 5-10×. Use a gate driver supplying ≥10V. (2) Do NOT exceed 250V VDS, including transient overshoot from transformer leakage or inductive ringing - add a snubber or TVS clamp. (3) Do NOT operate in linear region (active region) for sustained periods; the device is intended for switching operation, not as a pass element. (4) Do NOT skip the gate-source resistor; without 10kΩ the gate can float during hot-plug and partially turn on, causing shoot-through in half-bridge configurations. (5) Do NOT use a DPAK without the drain tab soldered - without the tab thermal path, PD collapses to <2W and the device overheats.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

ROHS3 compliant per Infineon product page. AEC-Q101 qualified for automotive applications (note: AEC-Q101, not AEC-Q100, as this is a discrete semiconductor). Lead-free matte-tin finish. Halogen-free per Infineon Green Product declaration.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies IPD5N25S3430ATMA1 IPD5N25S3-430 IPB35N10S3L26ATMA1 IPD50N04S408ATMA1 BSC155N06NDATMA1 NVD5890NLT4G N-channel MOSFET OptiMOS planar-trench MOSFET DPAK PG-TO252-3-313 RDS(on) VDS VGS(th) AEC-Q101 ROHS3 automotive grade 24V automotive bus load-dump transient half-bridge flyback converter BLDC motor drive thermal pad surface mount
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