IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon
MPN: IPD60R180P7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.81 | $810.00 |
IPD60R180P7ATMA1 Overview
A superjunction MOSFET is a power-MOSFET architecture that uses alternating P/N epitaxial layers to push the silicon area-specific on-resistance well below what conventional planar MOSFETs can achieve at the same breakdown voltage. CoolMOS P7 is Infineon's 7th-generation refinement of this concept, combining the fast-switching SJ cell with very low parasitic capacitances and a controlled body-diode dv/dt, which yields lower ringing, reduced EMI, and simplified gate-drive design versus earlier P6 series parts.
Key headline specifications include: 600 V drain-source breakdown (VBR(DSS)), 180 mOhm maximum RDS(on) at VGS=10 V, a typical gate charge QG of around 18 nC, an ultra-low effective output capacitance Coss(eff) that reduces switching loss in hard-switched topologies, and an avalanche-rated single-pulse body diode. The integrated Zener-protected gate oxide increases ESD robustness and tolerates VGS transients up to +/-20 V.
Architecturally, the CoolMOS P7 cell uses a deep-trench superjunction structure that delivers the same RDS(on) area as a 500 V planar part while still rating for 600 V operation, giving the designer extra margin for 390 V PFC bulk rails or universal-input rectified buses up to 420 V. The fast body diode and tight parameter distribution across lots simplify LLC, PFC, and flyback converter design-in.
Typical applications include PFC boost stages in 80 PLUS Titanium PSUs, LLC half-bridge primaries in server and telecom rectifiers, flyback switches in industrial SMPS adapters, solar micro-inverters, LED driver boost stages, and auxiliary housekeeping converters in white goods and e-mobility charging stations. Any application that previously used a 600 V CoolMOS P6 part can directly drop in the P7 for higher efficiency and easier EMI compliance.
When designing with this part, keep the gate-drive loop compact (gate-source resistor under 10 ohm, optional ferrite bead) and use an isolated or kelvin-source package when switching speeds above 100 kHz to suppress source-inductance ringing. Confirm that the application's worst-case avalanche energy (EAS) and dv/dt stay within the datasheet SOA curves.
This page synthesizes distributor pricing, drop-in compatible CoolMOS P7 alternatives, and practical layout notes that go well beyond the manufacturer datasheet summary, giving power-supply engineers a single decision-ready reference.
Drop-in alternatives for IPD60R180P7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD60R180P7ATMA1 (same form factor and footprint) — differing in Package, Drain-Source Voltage (VDS), Technology, MSL Level, Operating Junction Temperature.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD60R180P7
✅ Drop-In📋 Reference alternative (not in catalog)
IPD65R380E6ATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →IPD50N06S409ATMA2
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →IPD5N25S3430ATMA1
✅ Drop-In✓ In Stock
$0.39 / Unit
View Datasheet →IAUC60N04S6L030HATMA1
✅ Drop-In✓ In Stock
$0.94 / Unit
View Datasheet →IPD60R180P7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P7 |
| Technology | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at TC=25C | 18 A |
| On-Resistance RDS(on) max at VGS=10V | 180 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Total Power Dissipation (PD) at TC=25C | 72 W |
| Operating Junction Temperature | -55C to +150C |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Shipping Package | Tape and Reel (ATMA1 suffix) |
IPD60R180P7ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate control input; VGS drive referenced to Source |
| Pin 2 | Drain (D) — Main power terminal; also connected to the metal tab |
| Pin 3 | Source (S) — Power return; reference for gate drive and Kelvin source |
| Pin Tab | Drain (D) — Metal tab internally connected to pin 2 Drain; provides primary thermal path |
Safe Operating Area (DC, TC=25C)
Typical Applications
IPD60R180P7ATMA1 is suitable for 6 applications: PFC Boost Stage in Universal-Input SMPS, LLC Half-Bridge Primary Switch, Industrial Flyback SMPS Primary Switch, Solar Micro-Inverter DC-AC Stage, LED Driver Boost Stage, E-Mobility Charging Station Auxiliary SMPS.
PFC Boost Stage in Universal-Input SMPS
The IPD60R180P7ATMA1 fits the PFC boost switch position in 80 PLUS Silver-to-Gold ATX and adapter power supplies. Its 600 V VDS rating easily covers rectified 265 VAC mains (peak ~375 V DC) with margin for surge, while 180 mOhm RDS(on) at 18 A keeps conduction loss under 1.5 W at full load. CoolMOS P7's low Coss(eff) reduces hard-switching loss at 65-100 kHz CCM PFC, improving efficiency by 1-2 percentage points versus planar 600 V MOSFETs.
Recommended
LLC Half-Bridge Primary Switch
In LLC resonant converter primaries for server and telecom 48 V rectifiers, the IPD60R180P7ATMA1 delivers the fast body-diode reverse recovery and tight Coss tolerance that P7 is designed for. Two devices form the half-bridge across the resonant tank; 600 V rating tolerates the LLC magnetizing-inductance overshoot beyond bus voltage. The 180 mOhm RDS(on) is a good compromise between conduction loss and gate-drive loss at 100-200 kHz operation.
Recommended
Industrial Flyback SMPS Primary Switch
The IPD60R180P7ATMA1 is a strong fit for the primary-side switch of 50-150 W industrial flyback converters used in machine-control auxiliary supplies and white goods. CoolMOS P7's integrated gate Zener protection (VGS +/-20 V tolerant) tolerates the flyback leakage-inductance spikes that frequently destroy planar MOSFETs. The PG-TO252-3 DPAK package allows compact heatsink-less designs up to 90 W input with proper copper thermal management.
Recommended
Solar Micro-Inverter DC-AC Stage
For sub-300 W solar micro-inverters running from a 40-60 V PV string through a high-voltage boost to 400 V DC bus, the IPD60R180P7ATMA1 is suitable for the DC-AC full-bridge switches when paired with an isolation transformer and proper gate driver. The 600 V rating allows large safety margin over the 400 V bus. Low Coss(eff) improves light-load efficiency, important for solar yield during low-irradiance morning/evening conditions.
Recommended
LED Driver Boost Stage
The IPD60R180P7ATMA1 in the boost switch position of commercial LED drivers (24-48 V input, 60-100 V output at 0.5-1 A LED current) handles the switching stress with low ringing thanks to P7's controlled body-diode dv/dt. 180 mOhm RDS(on) keeps conduction loss manageable at continuous-conduction-mode operation. The DPAK package dissipates the ~3-5 W switching+conduction loss with a small copper pad, eliminating heatsink cost.
Recommended
E-Mobility Charging Station Auxiliary SMPS
The IPD60R180P7ATMA1 works as the primary switch in 100-300 W auxiliary supplies that power control boards and contactors in Level 2 EV charging stations. Universal-input 90-265 VAC operation pushes the bulk rail to 420 V DC; the 600 V rating covers this with 30% derating. Industrial-grade temperature range (-55 C to +150 C) suits outdoor cabinet thermal environments. CoolMOS P7 efficiency keeps no-load consumption below 75 mW for ENERGY STAR compliance.
Recommended
Recommended Products Summary
Engineering reference data for IPD60R180P7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD60R180P7 | IPD65R380E6ATMA1 | IPD5N25S3430ATMA1 | IAUC60N04S6L030HATMA1 | IPD50N06S409ATMA2 |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V - same | 650 V (+8%) | 250 V (-58%) | 40 V (-93%) | 60 V (-90%) |
| On-Resistance RDS(on) max | 180 mOhm | 180 mOhm - same | 380 mOhm (+111%) | 43 mOhm (-76%) | 3.0 mOhm (-98%) | 4.9 mOhm (-97%) |
| Technology Family | CoolMOS P7 (Superjunction) | CoolMOS P7 - same | CoolMOS E6 | CoolMOS S3 | OptiMOS automotive | OptiMOS industrial |
| Automotive Grade | No (industrial) | No - same | No | No | Yes (AEC-Q101) | No |
| Shipping Format | Tape & Reel (ATMA1) | Tray/Tube (no ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA2) |
Key Differentiators
- CoolMOS P7 generation with lowest Coss(eff) in 600 V class (vs IPD65R380E6ATMA1 (CoolMOS E6))
- Integrated Zener-protected gate oxide (vs IPD50N06S409ATMA2 (OptiMOS planar))
- Fast body diode with controlled reverse recovery (vs IAUC60N04S6L030HATMA1 (40 V OptiMOS))
Design Notes
The PG-TO252-3 (DPAK) package has a junction-to-ambient thermal resistance RthJA of approximately 50 C/W on a 1 sq-inch single-sided copper pour, dropping to ~35 C/W with 2 oz copper on a 4 sq-inch pad. At 5 W total dissipation (typical 90 W flyback at 70 percent efficiency), the junction rises 175-250 C above ambient - well above the 150 C rating. Mount the tab to at least 4 sq-inch of 2 oz copper, or attach a small clip-on heatsink (10-15 C/W) for designs above 3 W dissipation. Estimated junction rise based on datasheet RthJA and assumed copper geometry.
Keep the gate-drive loop (gate resistor to gate pin to source pin back to driver ground) under 1 cm² to minimize parasitic inductance. The DPAK package lacks a Kelvin source, so source inductance is shared between power and gate loops - use a small ferrite bead or 5-10 ohm gate resistor to damp ringing above 50 MHz. Place the gate-driver IC within 5 mm of the gate pin and use wide (>= 0.5 mm) source-side copper to reduce common-source inductance.
Do not exceed VGS = +/-20 V even though CoolMOS P7 has a Zener-protected gate - sustained over-voltage will degrade the gate oxide. Drive the gate with 10-12 V for RDS(on) spec compliance, not 15 V. Do not parallel IPD60R180P7ATMA1 devices without individual gate resistors; even small parameter mismatches can cause current hogging. Verify avalanche energy EAS stays within the single-pulse curve from the datasheet when designing flyback converters with significant leakage inductance.
Solder the DPAK tab to a copper pad equal to the package footprint (approximately 6.5 mm x 6.5 mm with thermal vias underneath). Use 4-6 thermal vias of 0.3 mm diameter to the opposite copper layer for heat spreading to a ground plane or inner plane. Keep the drain copper area away from the gate trace by at least 2 mm to minimize Miller capacitance coupling and prevent parasitic turn-on during high dv/dt transitions.
Compliance Information
RoHS and REACH compliant per Infineon product page. Industrial grade - not AEC-Q100/Q101 qualified. For automotive, see IAUC60N04S6L030HATMA1 in same package.
