IPD600N25N3GATMA1 vs IPD60R1K0PFD7SAUMA1 Comparison

Detailed side-by-side comparison of IPD600N25N3GATMA1 by Infineon and IPD60R1K0PFD7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 ✓ Active

Specification Comparison

Parameter IPD600N25N3GATMA1 IPD60R1K0PFD7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.84 $0.36
Manufacturer Infineon Technologies —
Part Series OptiMOS 3 —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 250 V 600 V
Continuous Drain Current (ID) at Tc 25 A —
Power Dissipation (PD) at Tc 136 W —
On-Resistance RDS(on) max 60 mOhm at VGS = 10 V —
Gate Threshold Voltage [DATA_NEEDED: VGS(th) typical/min/max] —
Operating Junction Temperature -55 C to +175 C —
Package PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount PG-TO252-3 (DPAK, 2 leads + tab, SC-63)
Mounting Type Surface Mount (Tape & Reel) Surface Mount
Technology OptiMOS 3 trench MOSFET CoolMOS PFD7 Superjunction (SJ) MOSFET
Lead Plating Pb-free —
RoHS Compliance Compliant —
Halogen Free Yes, per IEC 61249-2-21 —
JEDEC Qualification Qualified for target application —
Polarity / Channel Type — N-Channel Enhancement Mode
Continuous Drain Current (ID) at TC — 4.7 A
Power Dissipation (PD) at TC — 26 W
Drain-Source On-Resistance (RDS(on)) — 1 Ω @ VGS=10V
Gate Threshold Voltage (VGS(th)) — ±20 V (max gate-source)
Gate Charge (QG) — 6 nC @ VGS=10V
Output Capacitance (Coss) — 230 pF @ 400 V
Operating Temperature Range — -55C to +150C (TJ)
Gate Drive Voltage (recommended) — 10 V (full enhancement)
RoHS Status — Compliant
Series — CoolMOS PFD7 consumer / superjunction

Datasheets & Resources

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