IPD600N25N3GATMA1 vs IPD60R1K0PFD7SAUMA1 对比
详细并排对比 IPD600N25N3GATMA1 出自 Infineon 和 IPD60R1K0PFD7SAUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD600N25N3GATMA1 | IPD60R1K0PFD7SAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.84 | $0.36 |
| Manufacturer | Infineon Technologies | — |
| Part Series | OptiMOS 3 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 250 V | 600 V |
| Continuous Drain Current (ID) at Tc | 25 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| On-Resistance RDS(on) max | 60 mOhm at VGS = 10 V | — |
| 栅极阈值电压 | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) |
| 安装类型 | Surface Mount (Tape & Reel) | Surface Mount |
| Technology | OptiMOS 3 trench MOSFET | CoolMOS PFD7 Superjunction (SJ) MOSFET |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| 无卤 | Yes, per IEC 61249-2-21 | — |
| JEDEC Qualification | Qualified for target application | — |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Continuous Drain Current (ID) at TC | — | 4.7 A |
| Power Dissipation (PD) at TC | — | 26 W |
| Drain-Source On-Resistance (RDS(on)) | — | 1 Ω @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | ±20 V (max gate-source) |
| Gate Charge (QG) | — | 6 nC @ VGS=10V |
| Output Capacitance (Coss) | — | 230 pF @ 400 V |
| 工作温度范围 | — | -55C to +150C (TJ) |
| Gate Drive Voltage (recommended) | — | 10 V (full enhancement) |
| RoHS 状态 | — | Compliant |
| Series | — | CoolMOS PFD7 consumer / superjunction |