IPD70N10S312ATMA2 vs BSZ110N08NS5ATMA1 Comparison

Detailed side-by-side comparison of IPD70N10S312ATMA2 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter IPD70N10S312ATMA2 BSZ110N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.69 $0.44
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD70N10S312ATMA2 β€”
Technology OptiMOS-T Power-MOSFET (N-Channel) OptiMOS 5 N-Channel Power MOSFET
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID, Tc) 70 A β€”
Power Dissipation (Ptot, Tc=25C) 125 W β€”
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Operating Temperature Range -55C to +175C [DATA_NEEDED: operating temperature range]
Package PG-TO252-3-11 (DPAK) PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) β€”
Channel Type N-Channel Enhancement Mode β€”
RoHS Status Compliant Compliant
MSL Level 1 (unlimited floor life) [DATA_NEEDED: MSL level]
Avalanche Rated Yes β€”
Part Family β€” OptiMOS 5
Drain-to-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) at Tc β€” 40 A
On-Resistance RDS(on) max β€” 11 mΞ©
Power Dissipation (PD) at Tc β€” 50 W
Polarity β€” N-Channel
Configuration β€” Single MOSFET
Gate Drive Voltage (VGS) β€” [DATA_NEEDED: VGS rating]

Datasheets & Resources

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