IPD70N10S312ATMA2 vs BSZ110N08NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD70N10S312ATMA2 sa pamamagitan ng Infineon at BSZ110N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ110N08NS5ATMA1 BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD70N10S312ATMA2 BSZ110N08NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD70N10S312ATMA2 —
Technology OptiMOS-T Power-MOSFET (N-Channel) OptiMOS 5 N-Channel Power MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc) 70 A —
Power Dissipation (Ptot, Tc=25C) 125 W —
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Hanay ng Temperature na Operasyon -55C to +175C [DATA_NEEDED: operating temperature range]
Packhaging PG-TO252-3-11 (DPAK) PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain, Source) —
Channel Type N-Channel Enhancement Mode —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (unlimited floor life) [DATA_NEEDED: MSL level]
Avalanche Rated Yes —
Part Family — OptiMOS 5
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Tc — 40 A
On-Resistance RDS(on) max — 11 mΩ
Power Dissipation (PD) at Tc — 50 W
Polarity — N-Channel
Configuration — Single MOSFET
Gate Drive Voltage (VGS) — [DATA_NEEDED: VGS rating]

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita