IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
MPN: IPD70N10S312ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.69 | $690.00 |
Drop-in alternatives for IPD70N10S312ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IPD70N10S312ATMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD70N10S312ATMA2 |
| Technology | OptiMOS-T Power-MOSFET (N-Channel) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A |
| Power Dissipation (Ptot, Tc=25C) | 125 W |
| Gate-Source Voltage (VGS) | ±20 V |
| Operating Temperature Range | -55C to +175C |
| Package | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) |
| Channel Type | N-Channel Enhancement Mode |
| RoHS Status | Compliant |
| MSL Level | 1 (unlimited floor life) |
| Avalanche Rated | Yes |
IPD70N10S312ATMA2 Pin Configuration
| Pin 1 | Gate — Gate control input (drive with 10V typical) |
| Pin 2 | Drain — Drain terminal (internally connected to the exposed tab) |
| Pin 3 | Source — Source terminal (reference for gate drive) |
| Pin Tab | Drain — Exposed metal tab electrically and thermally connected to drain |
Safe Operating Area (DC)
Typical Applications
IPD70N10S312ATMA2 is suitable for 7 applications: 24V Industrial DC-DC Converters, Synchronous Rectification in SMPS, Motor Drive H-Bridge Switch, Battery Protection and OR-ing Switch, Hot-Swap and eFuse Circuits, LED Lighting Driver Output Stage, Telecom 48V Point-of-Load Conversion.
24V Industrial DC-DC Converters
The IPD70N10S312ATMA2 fits 24 V industrial DC-DC converters because its 100 V VDS rating provides 4x safety margin over a nominal 24 V bus, comfortably absorbing inductive transients from transformer leakage and load-step events. The 70 A continuous ID supports converter power levels up to approximately 1.5 kW at moderate duty cycles. In a typical forward or half-bridge topology, the device pairs with a dedicated gate driver such as the 1EDB7275FXUMA1 from Infineon. Its OptiMOS-T technology delivers low RDS(on) and low gate charge, minimizing conduction and switching losses. The DPAK tab dissipates heat efficiently when soldered to a copper pour, eliminating the need for an external heatsink in many designs.
Recommended
Synchronous Rectification in SMPS
In synchronous rectification stages of 24 V-input SMPS, the IPD70N10S312ATMA2 replaces Schottky diodes to reduce conduction losses by approximately 50% at high current. Its low RDS(on) and OptiMOS-T cell design minimize both conduction and body-diode reverse-recovery losses, which directly improves overall converter efficiency at full load. The 100 V VDS rating handles the rectified bus voltage plus reflected transient overshoot from the transformer with comfortable margin. Designers should add a small dead-time in the controller firmware to prevent shoot-through and use a gate driver capable of sourcing/sinking 2 A for fast switching edges.
Recommended
Motor Drive H-Bridge Switch
The IPD70N10S312ATMA2 serves as a low-side or high-side switch in 24 V brushed DC motor H-bridges driving pumps, fans, and small industrial actuators. Its 70 A continuous rating handles motor stall currents typical of fractional-horsepower DC motors, while the 100 V VDS rating absorbs inductive kickback from motor windings without avalanche breakdown. Pairing two IPD70N10S312ATMA2 low-side FETs with two P-channel high-side FETs (or a gate-driver bootstrap) creates a complete H-bridge. The DPAK tab enables direct PCB mounting with thermal vias to inner-layer copper pours for sustained current handling.
Recommended
Battery Protection and OR-ing Switch
In battery management systems (BMS) and OR-ing switch circuits, the IPD70N10S312ATMA2 acts as a low-loss reverse-polarity and over-discharge disconnect switch. Its 100 V VDS rating accommodates 24 V or 48 V battery stacks with substantial transient margin, and its low RDS(on) minimizes voltage drop across the disconnect path. For lithium-ion battery packs the device prevents reverse-current flow during cell imbalance events. The DPAK footprint simplifies PCB layout and supports continuous high-current operation when mounted on adequate copper area. For multi-cell battery systems above 60 V, the higher VDS rating is essential.
Recommended
Hot-Swap and eFuse Circuits
The IPD70N10S312ATMA2 works as the pass element in 24 V hot-swap and eFuse circuits, where it controls inrush current during board insertion into a live backplane. Its 70 A rating supports high-power server and telecom plug-in cards, and the 100 V VDS rating handles inductive transients from PCB parasitics during switching events. An SOA-aware hot-swap controller monitors drain current and gate voltage to keep the MOSFET within its safe operating area during the inrush phase. The OptiMOS-T linear-mode capability allows the device to dissipate inrush energy safely without triggering thermal shutdown when properly heatsinked.
Recommended
LED Lighting Driver Output Stage
In high-brightness LED drivers operating from 24 V or 48 V bus rails, the IPD70N10S312ATMA2 functions as a constant-current linear regulator or buck-switch element. Its 100 V VDS rating tolerates input bus transients common in industrial and automotive LED lighting, while its low RDS(on) minimizes heat dissipation in the linear regulation path. For PWM-dimmed LED strings the device's fast switching capability preserves dimming ratio accuracy. The DPAK package's exposed tab provides direct thermal coupling to the PCB copper pour or an optional heatsink for high-current LED arrays requiring sustained thermal performance.
Recommended
Telecom 48V Point-of-Load Conversion
In telecom 48 V input point-of-load converters delivering 12 V or lower to ASICs and FPGAs, the IPD70N10S312ATMA2 provides the high-side or low-side switch in isolated or non-isolated topologies. The 100 V VDS rating comfortably handles 48 V nominal bus with surge margin, and the 70 A continuous ID supports converter power levels up to approximately 700 W in continuous operation. The OptiMOS-T process delivers high efficiency at the switching frequencies (100-500 kHz) typical of telecom POL converters. The DPAK footprint allows direct replacement of competing 100 V N-channel MOSFETs in standardized reference designs.
Recommended
Recommended Products Summary
Engineering reference data for IPD70N10S312ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD70N10S312ATMA1 | IPD90N06S407ATMA2 | IPB020N10N5LFATMA1 | IPD33CN10NGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| VDS (Drain-Source Voltage) | 100 V | 100 V | 60 V | 100 V | 100 V |
| Continuous Drain Current (ID) | 70 A | 70 A | 90 A | [DATA_NEEDED] | 33 A |
| Power Dissipation (Ptot) | 125 W | 125 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS-T | OptiMOS-T | OptiMOS-T | OptiMOS-5 | OptiMOS |
| RDS(on) - typical at VGS=10V | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | Lower RDS(on) | [DATA_NEEDED] |
| Avalanche Rated | Yes | Yes | Yes | Yes | Yes |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Industry-standard DPAK footprint with full drop-in compatibility (vs IPD90N06S407ATMA2)
- Higher voltage rating in same DPAK package (vs IPD33CN10NGATMA1)
- OptiMOS-T maturity and broad ecosystem (vs IPB020N10N5LFATMA1 (OptiMOS-5))
Design Notes
The PG-TO252-3-11 (DPAK) package requires sufficient copper area on the drain tab to achieve rated 125 W power dissipation. Estimated: with a 1 square inch (645 mm^2) copper pour on a 1 oz copper layer, thermal resistance theta_JA is approximately 50 C/W, allowing about 2.5 W continuous dissipation at 25C ambient. For higher power, increase copper area to 4 square inches or add thermal vias to inner-layer copper planes. Without proper heatsinking, junction temperature can exceed 175C and trigger thermal shutdown or device failure.
Route the gate drive trace away from the drain switching node to minimize parasitic coupling. Keep the gate-source loop area as small as possible by placing the gate driver close to the MOSFET and using a tight gate-source resistor (10-100 ohm) network to suppress ringing. The exposed drain tab should be soldered to a copper pad of at least the same area as the package footprint, with thermal vias (typically 9-12 vias of 0.3 mm diameter) connecting to inner copper planes for heat spreading.
Do not exceed VGS of +/-20 V even momentarily - static discharge during handling can permanently damage the gate oxide. Always observe ESD precautions and use a gate-source resistor (10 kohm typical) when the gate is floating. For hard-switched topologies, add a snubber or gate-source resistor to dampen parasitic oscillations. Do not assume the SOA applies to pulsed operation without consulting the datasheet's pulsed-SOA curves. Inductive loads require a flyback or freewheeling diode to prevent avalanche breakdown at turn-off.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications refer to Infineon's automotive-grade OptiMOS-T portfolio. Lead-free reflow soldering compatible up to 260C peak.
