IPD90N03S4L02ATMA1 vs BSC027N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPD90N03S4L02ATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 β ActiveInfineon
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPD90N03S4L02ATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.54 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench | OptiMOS 3 (Trench) |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Tc | 90 A | β |
| Power Dissipation (PD) at Tc | 136 W | β |
| RDS(on) Max at VGS=10 V | 2.2 mΞ© | β |
| RDS(on) Max at VGS=4.5 V | [DATA_NEEDED: typical value at VGS=4.5 V] | β |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical value] | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Avalanche Rated | 100% Avalanche tested | β |
| Package | PG-TO252-3-11 (DPAK, surface mount) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020, up to 260Β°C peak reflow) | 1 |
| RoHS Status | Compliant (Green Package) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | β |
| Series | OptiMOS-T2 | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 24 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.7 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 2.5 W |
| Power Dissipation (Tc=25Β°C) | β | 83 W |
| Operating Temperature Range | β | -55Β°C to +150Β°C |
| Halogen-Free | β | Yes |