IPD90N03S4L02ATMA1 vs BSC027N04LSGATMA1 Perbandingan

Perbandingan bersamaan detil IPD90N03S4L02ATMA1 dari Infineon dan BSC027N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD90N03S4L02ATMA1 BSC027N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS-T2 trench OptiMOS 3 (Trench)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Tc 90 A —
Power Dissipation (PD) at Tc 136 W —
RDS(on) Max at VGS=10 V 2.2 mΩ —
RDS(on) Max at VGS=4.5 V [DATA_NEEDED: typical value at VGS=4.5 V] —
Gate Drive Voltage (VGS) 4.5 V to 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical value] —
Suhu Hubung Kerja -55°C to +175°C —
Avalanche Rated 100% Avalanche tested —
Paket PG-TO252-3-11 (DPAK, surface mount) PG-TDSON-8-1 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) 1
Status RoHS Compliant (Green Package) Compliant
Automotive Qualification AEC-Q101 qualified —
Series OptiMOS-T2 —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta=25°C — 24 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 2.7 mΩ
Power Dissipation (Ta=25°C) — 2.5 W
Dissipasi Listrik (TC=25°C) — 83 W
Rentang Suhu Kerja — -55°C to +150°C
Bebas Halogen — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon